Vendor: Weasic Microelectronics Category: Amplifier

Low-Noise Amplifier 76-81 GHz

The WEA7681L22G is an integrated low-noise amplifier with Gain Control block designed for Automotive Radar and mm-Wave Wireless P…

GlobalFoundries 22nm FDX Silicon Proven View all specifications

Overview

The WEA7681L22G is an integrated low-noise amplifier with Gain Control block designed for Automotive Radar and mm-Wave Wireless Phase Arrays receiver applications. The WEA7681L22G operates between 76 and 81GHz with a signal gain of 16 dB and noise figure of 8 dB from 1.5V supply. The WEA7681L22G is fabricated on GlobalFoundries 22FDX process occupying a total silicon area of 800um x 125um.

Key features

  • Small signal gain: 15 dB
  • Noise figure: 8 dB
  • IDC:30 mA
  • -3 dBm RX Input Referred IP3@max gain
  • -13 dBm RX IP1dB
  • Single DC supply: 1.5V
  • 16 steps gain control,1dB step
  • Area:800x125um

Block Diagram

Applications

  • Radar, mm-Wave Wireless Phase Arrays

Silicon Options

Foundry Node Process Maturity
GlobalFoundries 22nm FDX Silicon Proven

Specifications

Identity

Part Number
WEA7681L22G
Vendor
Weasic Microelectronics
Type
Silicon IP

Files

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Provider

Frequently asked questions about Amplifier IP cores

What is Low-Noise Amplifier 76-81 GHz?

Low-Noise Amplifier 76-81 GHz is a Amplifier IP core from Weasic Microelectronics listed on Semi IP Hub. It is listed with support for globalfoundries Silicon Proven.

How should engineers evaluate this Amplifier?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this Amplifier IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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