Amplifier linearization promotes efficiency in multi-carrier WCDMA basestation
Amplifier linearization promotes efficiency in multi-carrier WCDMA basestation
Vendor:
Weasic Microelectronics
Category:
Amplifier
Power Amplifier 0.7-1 GHz
The IC1A comprises a low-band Doherty PA with Preamplifier, an input bypass switch , a power detector, a DPD coupling path, a tem…
Overview
The IC1A comprises a low-band Doherty PA with Preamplifier, an input bypass switch , a power detector, a DPD coupling path, a temperature sensor all controlled via SPI.
Key features
- Low-band Doherty PA: 698MHz to 968MHz
- DPD Coupling Path: 556 MHz to 1162 MHz
- Power Detector
- General purpose ADC: 12-bit SAR ADC, Die temperature sense
- SPI slave control interface: access to register map self-clocked, SPI clock up to 20 MHz
- 1 GPIOs
Applications
- Satellite communication
Silicon Options
| Foundry | Node | Process | Maturity |
|---|---|---|---|
| GlobalFoundries | 130nm | RFSOI | Silicon Proven |
Specifications
Identity
Part Number
WEA071P130G
Vendor
Weasic Microelectronics
Type
Silicon IP
Files
Note: some files may require an NDA depending on provider policy.
Provider
HQ:
Greece
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Frequently asked questions about Amplifier IP cores
What is Power Amplifier 0.7-1 GHz?
Power Amplifier 0.7-1 GHz is a Amplifier IP core from Weasic Microelectronics listed on Semi IP Hub. It is listed with support for globalfoundries Silicon Proven.
How should engineers evaluate this Amplifier?
Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this Amplifier IP.
Can this semiconductor IP be compared with similar products?
Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.