Vendor: Weasic Microelectronics Category: Amplifier

Power Amplifier 0.7-1 GHz

The IC1A comprises a low-band Doherty PA with Preamplifier, an input bypass switch , a power detector, a DPD coupling path, a tem…

GlobalFoundries 130nm RFSOI Silicon Proven View all specifications

Overview

The IC1A comprises a low-band Doherty PA with Preamplifier, an input bypass switch , a power detector, a DPD coupling path, a temperature sensor all controlled via SPI.

Key features

  • Low-band Doherty PA: 698MHz to 968MHz
  • DPD Coupling Path: 556 MHz to 1162 MHz
  • Power Detector
  • General purpose ADC: 12-bit SAR ADC, Die temperature sense
  • SPI slave control interface: access to register map self-clocked, SPI clock up to 20 MHz
  • 1 GPIOs

Applications

  • Satellite communication

Silicon Options

Foundry Node Process Maturity
GlobalFoundries 130nm RFSOI Silicon Proven

Specifications

Identity

Part Number
WEA071P130G
Vendor
Weasic Microelectronics
Type
Silicon IP

Files

Note: some files may require an NDA depending on provider policy.

Provider

Frequently asked questions about Amplifier IP cores

What is Power Amplifier 0.7-1 GHz?

Power Amplifier 0.7-1 GHz is a Amplifier IP core from Weasic Microelectronics listed on Semi IP Hub. It is listed with support for globalfoundries Silicon Proven.

How should engineers evaluate this Amplifier?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this Amplifier IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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