Baseband power amplifier with attenuator
PA consists of attenuator, 1-stage amplifier with tunable gain.
Overview
PA consists of attenuator, 1-stage amplifier with tunable gain. Attenuator reduces output power by 1dB from 0 to 60 dB. The amplifier gain is adjustable in increments of 2 dB.
Key features
- TSMC 65 nm CRN65LP
- Differential inputs, outputs
- High frequency 2 – 100 MHz
- Available attenuation range from 0 to 60 dB (step by 1 dB)
- Power amplifier with high IM3
- Maximum Output Power 14 dBm
- Portable to other technologies (upon request)
Block Diagram
Applications
- PA signal processing
What’s Included?
- Schematic or NetList
- Abstract model (.lef and .lib files)
- Layout view (optional)
- Behavioral model (Verilog)
- Extracted view (optional)
- GDSII
- DRC, LVS, antenna report
- Test bench with saved configurations (optional)
- Documentation
Silicon Options
| Foundry | Node | Process | Maturity |
|---|---|---|---|
| TSMC | 65nm | GP | Silicon Proven |
Specifications
Identity
Files
Note: some files may require an NDA depending on provider policy.
Provider
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Frequently asked questions about Amplifier IP cores
What is Baseband power amplifier with attenuator?
Baseband power amplifier with attenuator is a Amplifier IP core from NTLab listed on Semi IP Hub. It is listed with support for tsmc Silicon Proven.
How should engineers evaluate this Amplifier?
Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this Amplifier IP.
Can this semiconductor IP be compared with similar products?
Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.