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Vendor:
Faraday Technology
Category:
SRAM
55nm eFlash Dual-Port SRAM memory compiler with row redundancy
55nm eFlash Dual-Port SRAM memory compiler with row redundancy
Overview
55nm eFlash Dual-Port SRAM memory compiler with row redundancy
Silicon Options
| Foundry | Node | Process | Maturity |
|---|---|---|---|
| UMC | 55nm | 55nm 550 nm | — |
Specifications
Identity
Part Number
FSF0F_L_SJRED
Vendor
Faraday Technology
Type
Silicon IP
Provider
HQ:
Taiwan
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Frequently asked questions about SRAM IP cores
What is 55nm eFlash Dual-Port SRAM memory compiler with row redundancy?
55nm eFlash Dual-Port SRAM memory compiler with row redundancy is a SRAM IP core from Faraday Technology listed on Semi IP Hub. It is listed with support for umc.
How should engineers evaluate this SRAM?
Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this SRAM IP.
Can this semiconductor IP be compared with similar products?
Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.