512bit EEPROM IP with configuration 16p2w16bit

180SMIC_EEPROM_09 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 512 bits which is organized as 16 pages of 2 words by 16 bit with single-bit output data and parallel write data. Data writing in EEPROM consists of 2 phases - erasing and programming. Data to be written in EEPROM are applied to din1<15:0>, din0<15:0> inputs. Erasing words of a page is performed by setting to “1” the signal hv_on, with the signal erase is at state “1”. Data din1<15:0>, din0<15:0>, page address adr_p<3:0> and word address in page adr_w must not be changed throughout the whole cycle of erasing (i.e. while hv_on = “1”). Words are programmed when the signal hv_on= “1” and the signal PROG= “1”. Data reading is performed using the sample signal. Memory is optimized for usage in the industrial and commercial applications, requiring low power consumption and supply voltage.

• SMIC EEPROM CMOS 0.18 um
• High density of memory cells
• Programming and erasing data by one high-voltage pulse
• Programming and erase time – 2 ms (determined by specification of the SMIC EEPROM cell)
• Page writes allowed
• Data retention over 10 years (endurance 105 cycles, determined by SMIC technology)
• Low power dissipation in standby and active mode
• Internally organized 16(bit per word) x 2(word per page) x 16(page) bit

• Access control systems
• Radio-frequency identification systems, smart cards
• Electronic devices with battery power
• Chip serial ID and chip safety
• Electronic tags UHF band

• Schematic or NetList
• Abstract model (.lef and .lib files)
• Layout view (optional)
• Behavioral model (Verilog)
• Extracted view (optional)
• GDSII
• DRC, LVS, antenna report
• Test bench with saved configurations (optional)
• Documentation