1 Kbyte EEPROM IP · 64 pages × 8 words × 16 bit
AeEEPROM_G130_03 is a non-volatile electrically erasable programmable read-only memory (EEPROM) IP with 1 Kbyte capacity, organized as 64 pages of 8 words by 16 bits with parallel word write and single-bit read output. Data is written and erased by a single high-voltage pulse with fully automatic erase/program sequencing; a built-in 7 MHz RC-oscillator provides internal clocking with a glitchless clock output. The block is optimized for industrial and commercial applications requiring low power consumption and low supply voltage, and is implemented in GF Embedded EEPROM 0.13µm technology in a compact 0.179mm² footprint.
KEY PARAMETERS
| Parameter | Condition | Min | Typ | Max | Unit |
| Supply voltage | – | 1.1 | 1.2 | 1.3 | V |
| Operating temperature range | – | –40 | +27 | +125 | °C |
| Output clock frequency | Built-in oscillator, default adj. | 5.3 | 7.0 | 10.2 | MHz |
| Read setup time | Relative to read signal | 10 | – | – | µs |
| Access time | Read | – | 0.15 | 0.35 | µs |
| Programming time | One word (erase + write) | – | 2.1 | – | ms |
| Current consumption, read mode | Excl. oscillator and ref. source | 2.9 | 3.8 | 7.6 | µA |
| Current consumption, write mode | Average / peak | 22.0 / 38.0 | 28.9 / 53.5 | 49.5 / 73.6 | µA |
| Standby current | VDD = 1.2 V, T = 27…125 °C | – | – | 0.1–2.2 | µA |
| Area | – | – | 0.179 | – | mm² |
| Block dimensions | Height × Width | – | 484.9 × 370.2 | – | µm |
| Foundry | Node | Process | Maturity |
|---|---|---|---|
| GlobalFoundries | 130nm | 130 1300 nm | Silicon Proven |
Note: some files may require an NDA depending on provider policy.
1 Kbyte EEPROM IP is a EEPROM IP core from Aftera listed on Semi IP Hub. It is listed with support for globalfoundries Silicon Proven.
Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this EEPROM IP.
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