28 pages × 8 words × 16 bit, parallel word write, single high-voltage pulse erase/program with automatic sequencing.
AeEEPROM_G130_01 is a silicon-proven, non-volatile electrically erasable programmable read-only memory (EEPROM) IP with 3.6Kbit capacity, organized as 28 pages of 8 words by 16 bits with parallel word write and single-bit read output. Data is written and erased by a single high-voltage pulse with fully automatic erase/program sequencing. The block is optimized for industrial and commercial applications requiring low power consumption and low supply voltage, and is implemented in GF Embedded EEPROM 0.13µm technology in a compact 0.096mm² footprint.
KEY PARAMETERS
| Parameter | Condition | Min | Typ | Max | Unit |
| Supply voltage | – | 1.08 | 1.2 | 1.5 | V |
| Junction temperature range | – | –40 | +27 | +125 | °C |
| Clock frequency | External, ee_clk_in | – | 2 | – | MHz |
| Reference current | External, iref | – | 50 | – | nA |
| Access time | Read | – | 0.36 | 0.62 | µs |
| Programming time | One word (erase + write) | – | 4.1 | – | ms |
| Current consumption, read mode | – | 1.6 | 2 | 8.0 | µA |
| Current consumption, write mode | Average / peak | 7.5 | 10 / 28 | 24 / 40 | µA |
| Standby current | VDD = 1.2 V, T = 27…125 °C | – | – | 0.1–2.0 | µA |
| Area | – | – | 0.096 | – | mm² |
| Block dimensions | Height × Width | – | 359.16 × 268.16 | – | µm |
| Foundry | Node | Process | Maturity |
|---|---|---|---|
| GlobalFoundries | 130nm | G | Silicon Proven |
Note: some files may require an NDA depending on provider policy.
3.6 Kbit EEPROM IP is a EEPROM IP core from Aftera listed on Semi IP Hub. It is listed with support for globalfoundries Silicon Proven.
Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this EEPROM IP.
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