Vendor: NTLab Category: EEPROM

3.6Kbit EEPROM IP with configuration 28p8w16bit

GF130_EEPROM_01 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 3.6Kbit, which is organ…

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GlobalFoundries 130nm BCD Silicon Proven View all specifications

Overview

GF130_EEPROM_01 is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 3.6Kbit, which is organized as 28 pages of 8 words by 16 bits with single-bit output data and parallel write data in one word. Data writing is performed by setting data at di<15:0>, page address at adr_p<4:0>, word address in the page at adr_w<2:0>, and then applying wr="1". Writing process finishes with setting flag ready to "1". Data reading is carried out by specifying page address at adr_p<4:0>, word address in the page at adr_w<2:0>, bit address in the word at adr_b<3:0>, and then applying the reading comparator strobe sample="1". The read bit appears at pin do after some delay. Memory is optimized for usage in the industrial and commercial applications, requiring low power consumption and supply voltage. Data to be write are set at data input pin di<15:0>. Writing process starts, when signal wr goes to "1". Data di<15:0>, page address adr_p<4:0>, word address in page adr_w<2:0> are latched into internal registers and cannot be changed until the end of the writing process. At the end of the writing, the ready = "1" flag is set.

Key features

  • Global Foundries Embedded EEPROM 0.13 um
  • 3.6Kbit of available memory 16(bit per word) × 8(words per page) × 28(pages) bit
  • High density of memory cells
  • Writing and erasing data by one high-voltage pulse
  • Programming and erase times – 2ms each (determined by specification of the GF EEPROM cell)
  • Page writes allowed
  • Data retention and endurance cycles determined by GF technology
  • Low power dissipation in standby and active mode

Block Diagram

130GF_EEPROM_01 block diagram

Applications

  • Access control systems
  • RFID/NFC systems, smart cards
  • Electronic devices with battery power
  • Chip serial ID and chip safety
  • Electronic tags UHF band

What’s Included?

  • Schematic in electronic format (.netlist file)
  • Layout in GDSII electronic format (.gds file)
  • Abstract view in electronic format (.lef and .lib files)
  • DRC, LVS, antenna reports in electronic format (.summary, .report files)
  • Datasheet in electronic format (.pdf file)

Silicon Options

Foundry Node Process Maturity
GlobalFoundries 130nm BCD Silicon Proven

Specifications

Identity

Part Number
130GF_EEPROM_01
Vendor
NTLab
Type
Silicon IP

Files

Product Sheet Download

Note: some files may require an NDA depending on provider policy.

Provider

NTLab
HQ: Lithuania
Contact NTLab

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Frequently asked questions about EEPROM IP cores

What is 3.6Kbit EEPROM IP with configuration 28p8w16bit?

3.6Kbit EEPROM IP with configuration 28p8w16bit is a EEPROM IP core from NTLab listed on Semi IP Hub. It is listed with support for globalfoundries Silicon Proven.

How should engineers evaluate this EEPROM?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this EEPROM IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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