Vendor: NTLab Category: EEPROM

3.6Kbit EEPROM IP with configuration 28p8w16bit

130GF_EEPROM_08 IP is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 3.6 Kbits, which is …

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GlobalFoundries 130nm BCD Pre-Silicon View all specifications

Overview

130GF_EEPROM_08 IP is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 3.6 Kbits, which is organized as 28 pages of 8 words by 16 bit with single-bit output data and parallel write data. Data programming in EEPROM consists of 2 consecutive phases - erasing and writing. Data to be programmed in EEPROM are applied to D1<15:0>, D0<15:0>inputs. The erasing phase is performed by setting BUSY signal to “1” while the ERASE signal is also at “1”. The writing phase is performed by setting BUSY signal to “1” while the WRITE signal is also at “1”. Data D1<15:0>, D0<15:0>, page address ADR_P<4:0> and word address in page ADR_W<2:0> must not be changed throughout the whole cycle of writing (i.e. while HV_ON = “1”). Data reading is performed using the SAMPLE signal.

Memory is optimized for usage in the industrial and commercial applications, requiring low power consumption and supply voltage.

Total area: 0.12 mm2.

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Conditions

Value

 

Units

min

typ.

max

Supply voltage

VDD

Write mode

 

 

 

 

Read mode

 

 

 

 

Operating temperature range

Tj

-

-40

+27

+125

°C

Clock frequency for internal voltage doubler

FCLK_VDD2

 

-

 

-

 

0.5

 

-

 

MHz

Clock frequency for high voltage pump generator

FCLK_HV

 

-

 

-

 

1

 

-

 

MHz

Reference current

IREF

receiving device: pMOSFET

-

50

-

nA

Access time

tACC

1.2V ≤ VDD ≤ 1.65V

-

0.3

0.4

 

 

us

0.9V ≤ VDD < 1.2V

-

0.3

0.5

0.8V ≤ VDD < 0.9V

-

0.3

0.6

VDD = 0.7V

-

0.3

-

VDD = 0.6V

-

0.7

-

Active pulse width of BUSY signal

TPRG

-

1

2

4

ms

Current consumption in read mode*

IREAD

FSAMPLE = 0.5 MHz

DCSAMPLE = 75%

-

-

0.90

2.60

 

 

 

uA

VDD = 1.0 V

-

0.75

1.70

VDD = 0.9 V

-

0.70

1.60

VDD = 0.8 V

-

0.55

1.40

VDD = 0.7 V

-

0.50

-

VDD = 0.6 V

-

0.45

-

Average current consumption in program mode

IPROG_AVG

 

-

 

-

 

9

 

23

 

uA

Peak current consumption in program mode

IPROG_PEAK

 

-

 

-

 

27

 

41

 

uA

High Level Input Voltage

VIH

For digital inputs

0.85VDD

-

VDD

V

Low Level Input Voltage

VIL

-

-

0.15

V

Block Diagram

130GF_EEPROM_08 block diagram

Silicon Options

Foundry Node Process Maturity
GlobalFoundries 130nm BCD Pre-Silicon

Specifications

Identity

Part Number
130GF_EEPROM_08
Vendor
NTLab
Type
Silicon IP

Files

Product Sheet Download

Note: some files may require an NDA depending on provider policy.

Provider

NTLab
HQ: Lithuania
Contact NTLab

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Frequently asked questions about EEPROM IP cores

What is 3.6Kbit EEPROM IP with configuration 28p8w16bit?

3.6Kbit EEPROM IP with configuration 28p8w16bit is a EEPROM IP core from NTLab listed on Semi IP Hub. It is listed with support for globalfoundries Pre-Silicon.

How should engineers evaluate this EEPROM?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this EEPROM IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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