Samsung begins building China fab
EETimes (9/12/2012 5:30 AM EDT)
LONDON – South Korean electronics giant Samsung Electronics Co. Ltd. has broken ground on a wafer fab for NAND memory production in Xian, in northwestern China.
Initially Samsung is investing $2.3 billion to bring the Xian fab into operation in 2014, as part of a planned total investment of $7 billion. Samsung did not indicate the manufacturing capacity it expects to achieve at various times in the wafer fabs development.
To read the full article, click here
Related Semiconductor IP
- Camera Post-Processing IP
- DC-DC Split-Pi Boost-Buck Converter
- Deep learning accelerator
- MIL-STD-1553 Controller IP
- UFS 5.x Device IP
Related News
- Exec tried to set up copy-cat Samsung fab in China
- Foxconn Reportedly Readies Chip Fab in China
- Samsung Selects Texas as Site for $17 Billion Fab
- Samsung fab cobbling IP offerings for data-intensive SoCs
Latest News
- VeriSilicon Introduces CPP2000 Camera Post-Processing IP for Embodied Robotics and Mobile Vision Applications
- Infineon opens the world's largest fab for power semiconductors and analog/mixed-signal technologies in Dresden
- Tenstorrent Sets New Performance Records, Launches TT- Ascalon S, and Expands Across Japan
- Chips&Media Signs APV codec IP Licensing Deal with North American Big Tech, Establishing the ‘Second Front’ Against Apple’s ProRes
- Chipsolve Technologies Appoints Balaji Kanigicherla as Chairman of the Board