Samsung begins building China fab
EETimes (9/12/2012 5:30 AM EDT)
LONDON – South Korean electronics giant Samsung Electronics Co. Ltd. has broken ground on a wafer fab for NAND memory production in Xian, in northwestern China.
Initially Samsung is investing $2.3 billion to bring the Xian fab into operation in 2014, as part of a planned total investment of $7 billion. Samsung did not indicate the manufacturing capacity it expects to achieve at various times in the wafer fabs development.
To read the full article, click here
Related Semiconductor IP
- Verification IP for C-PHY
- Band-Gap Voltage Reference with dual 2µA Current Source - X-FAB XT018
- 250nA-88μA Current Reference - X-FAB XT018-0.18μm BCD-on-SOI CMOS
- UCIe D2D Adapter & PHY Integrated IP
- Low Dropout (LDO) Regulator
Related News
- Exec tried to set up copy-cat Samsung fab in China
- Foxconn Reportedly Readies Chip Fab in China
- Samsung Selects Texas as Site for $17 Billion Fab
- Samsung fab cobbling IP offerings for data-intensive SoCs
Latest News
- JEDEC Advances DDR5 MRDIMM Ecosystem with New Memory Interface Logic and Expanded MRDIMM Roadmap
- Altera Brings Determinism to Physical AI Systems with Latest Release of FPGA AI Suite
- Mosaic SoC raises $3.8M to bring real-time spatial intelligence to every consumer device
- UMC Reports First Quarter 2026 Results
- Rambus Appoints Sumeet Gagneja as Chief Financial Officer