Memory differences remain as ST chooses Globalfoundries for FDSOI
January 09, 2018 // By Peter Clarke, eeNews Analog
However, so far Globalfoundries has not announced that it can support the phase-change memory selected by ST as its non-volatile memory option at 28nm (see ST opts for phase-change memory on 28nm FDSOI ). When asked if Globalfoundries could support phase-change memory in FDSOI Alain Mutricy, senior vice president of product marketing told eeNews Europe: "That's not the announcement we are making today."
Globalfoundries has announced embedded MRAM on 22FDX (see Globalfoundries offers embedded MRAM on 22nm FDSOI ).
The general announcement comes as little surprise as ST has been a pioneer of 28nm FDSOI and has worked for many years in partnership with foundries Samsung and Globalfoundries.
To read the full article, click here
Related Semiconductor IP
- MIPI D-PHY Transmitter/Receiver for Samsung 28nm FD-SOI
- GLOBALFOUNDARIES 22nm FDSOI LVDS Transceiver Pad
- Samsung 28nm FDSOI MIPI DPHY V1.1
- Samsung 28nm FDSOI 1.8v/1.0v LVDS Transmitter
- Samsung 28nm FDSOI 1.8v/1.0v sub-LVDS Receiver
Related News
- ST plans for Dresden FDSOI production
- ST to deny rivals FDSOI access
- ST opts for phase-change memory on 28nm FDSOI
- GlobalFoundries and Microchip Announce Microchip's 28nm SuperFlash® Embedded Flash Memory Solution in Production
Latest News
- BrainChip Launches AKD1500 Raspberry Pi 5 Kit: Giving Developers a Direct Path from Prototype to Production
- Cadence Joins the Genesis Mission Consortium to Advance AI-Driven Scientific Discovery and Microelectronics Innovation
- Onsemi picks up Codasip’s low-end RISC-V business for $14.5 million
- Semidynamics and Nokia Explore Collaboration to Strengthen Europe’s Sovereign AI Capabilities
- VeriSilicon Introduces GLTiny™ 3D GPU Programming Model for Ultra-Low-Power, Memory-Efficient Wearable Devices