Memory differences remain as ST chooses Globalfoundries for FDSOI
January 09, 2018 // By Peter Clarke, eeNews Analog
STMicroelectronics has chosen Globalfoundries' 22FDX FDSOI process as a platform for its next processors for consumer and industrial applications.
However, so far Globalfoundries has not announced that it can support the phase-change memory selected by ST as its non-volatile memory option at 28nm (see ST opts for phase-change memory on 28nm FDSOI ). When asked if Globalfoundries could support phase-change memory in FDSOI Alain Mutricy, senior vice president of product marketing told eeNews Europe: "That's not the announcement we are making today."
Globalfoundries has announced embedded MRAM on 22FDX (see Globalfoundries offers embedded MRAM on 22nm FDSOI ).
The general announcement comes as little surprise as ST has been a pioneer of 28nm FDSOI and has worked for many years in partnership with foundries Samsung and Globalfoundries.
To read the full article, click here
Related Semiconductor IP
- USB3.0 PHY on GF22FDX and Samsung 28nm FDSOI
- GLOBALFOUNDARIES 22nm FDSOI LVDS Transceiver Pad
- Samsung 28nm FDSOI USB3.0 and PCIE2 combo PHY
- GLOBALFOUNDARIES 22nm FDSOI USB3.0 Dual Role PHY/OTG PHY
- MIPI D-PHY Transmitter/Receiver for DSI/CSI-2 on Samsung 28nm FD-SOI
Related News
- ST plans for Dresden FDSOI production
- ST to deny rivals FDSOI access
- ST opts for phase-change memory on 28nm FDSOI
- STMicroelectronics and GlobalFoundries to advance FD-SOI ecosystem with new 300mm manufacturing facility in France
Latest News
- SEMI Reports Worldwide Silicon Wafer Shipments Increase 13% Year-on-Year in Q1 2026
- POLYN Technology Announces Tapeout of Automotive Chip
- QuickLogic Establishes New Banking Relationship and Secures $10 Million Revolving Credit Facility
- TES is extending its PMU IP portfolio for X-FAB’s XT018 - 0.18µm BCD-on-SOI technology.
- RF Front-End Modules & Components IP Trends – Q1 2026 Monitoring Release