Intel, rivals gird for IC manufacturing showdown
Peter Clarke, EETimes
9/24/2012 1:00 PM EDT
Research teams are set to present on the FinFET approach--called tri-gate by Intel--on fully-depleted silicon-on-insulator (FDSOI) and on bulk planar processes at around 20 nm and beyond.
To read the full article, click here
Related Semiconductor IP
- Dual Channel 8b D/A Converter - TSMC T40ULP
- Dual Channel 12b D/A Converter - TSMC T40ULP+ESF3
- 8bit D/A Converter - TSMC 22nm ULP
- 12bit 2MSps A/D Converter - TSMC T22ULP
- TSMC 2nm 1V2 GPIO
Related News
- STMicroelectronics Secures Additional Sourcing for its Leading-Edge 28nm and 20nm FD-SOI Technology with GLOBALFOUNDRIES
- Cadence Digital, Custom/Analog Design Flows Certified and Design IP Available for Intel 16 FinFET Process
- TSMC Announces Move to 20nm Process
- Toppan Completes 22nm and 20nm Production Photomask Process through Toppan-IBM Joint Development
Latest News
- Brite Semiconductor Releases 28nm High-Performance SAR ADC IP, Driving Upgrades for High-Speed Signal Chain Applications
- Synopsys Updates CXL IP Portfolio for AI-Era Infrastructure
- BrainChip Launches Symphony Community Akida Bundle For IBM’s Workload Management Solution
- StarIC Appoints Dr. Masum Hossain as Chief Technology Officer
- Andes Technology Empowers RISC-V Developers with Its New Streamlined IDE, RVBuilder