Samsung begins building China fab
EETimes (9/12/2012 5:30 AM EDT)
LONDON – South Korean electronics giant Samsung Electronics Co. Ltd. has broken ground on a wafer fab for NAND memory production in Xian, in northwestern China.
Initially Samsung is investing $2.3 billion to bring the Xian fab into operation in 2014, as part of a planned total investment of $7 billion. Samsung did not indicate the manufacturing capacity it expects to achieve at various times in the wafer fabs development.
To read the full article, click here
Related Semiconductor IP
- UCIe D2D Adapter & PHY Integrated IP
- Low Dropout (LDO) Regulator
- 16-Bit xSPI PSRAM PHY
- MIPI CSI-2 CSE2 Security Module
- ASIL B Compliant MIPI CSI-2 CSE2 Security Module
Related News
- Exec tried to set up copy-cat Samsung fab in China
- Foxconn Reportedly Readies Chip Fab in China
- Samsung Selects Texas as Site for $17 Billion Fab
- Samsung fab cobbling IP offerings for data-intensive SoCs
Latest News
- Arasan Announces immediate availability of its UFS 5.0 Host controller IP
- Bolt Graphics Completes Tape-Out of Test Chip for Its High-Performance Zeus GPU, A Major Milestone in Reducing Computing Costs By 17x
- NEO Semiconductor Demonstrates 3D X-DRAM Proof-of-Concept, Secures Strategic Investment to Advance AI Memory
- M31 Collaborates with TSMC to Achieve Tapeout of eUSB2V2 on N2P Process, Advancing Design IP Ecosystem
- Menta’s eFPGA Technology Adopted by AIST for Cryptography and Hardware Security Programs