Faraday Technology Corporation is a leading fabless ASIC and silicon IP provider. The company's broad silicon IP portfolio includes I/O, Cell Library, Memory Compiler, ARM-compliant CPUs, DDRI/II/III, MPEG4, H.264, USB 2.0/3.0, 10/100 Ethernet, Serial ATA, and PCI Express, etc. Headquartered in Taiwan, Faraday has service and support offices around the world, including the U.S., Japan, Europe, and China. Faraday is listed in Taipei Stock Exchange, ticker 3035.
UMC 28nm Logic and Mixed-Mode HLP/RVT Process, 1.8V Analog ESD IO cell Library
UMC 28nm Logic and Mixed-Mode HLP/RVT Process, 1.8V Analog ESD IO cell Library
UMC 28nm Logic and Mixed-Mode HLP/RVT Process, 1.05V Analog ESD IO cell Library
UMC 28nm Logic and Mixed-Mode HLP/RVT Process, 1.05V Analog ESD IO cell Library
UMC 55nm e-flash Logic Process , 3.3V Analog ESD IO cell Library
UMC 55nm e-flash Logic Process , 3.3V Analog ESD IO cell Library
UMC 90nm LL/RVT LowK process true 3.3V Analog ESD IO cell Library Using 3.3V GOX52 IO
UMC 90nm LL/RVT LowK process true 3.3V Analog ESD IO cell Library Using 3.3V GOX52 IO
UMC 90nm LL-RVT (Low-K) Process with 3.3V device analog esd IO group (with BOAC)
UMC 90nm LL-RVT (Low-K) Process with 3.3V device analog esd IO group (with BOAC)
UMC 90nm LL/RVT LowK process true 3.3V Analog ESD IO cell Library Using 3.3V GOX52 IO
UMC 90nm LL/RVT LowK process true 3.3V Analog ESD IO cell Library Using 3.3V GOX52 IO
UMC 90nm SP/RVT process true 3.3V Analog ESD IO cell Library Using 3.3V GOX52 IO
UMC 90nm SP/RVT process true 3.3V Analog ESD IO cell Library Using 3.3V GOX52 IO
UMC 90nm SP/RVT Low-K process true 3.3V Analog ESD IO cell Library Using 3.3V GOX52 IO
UMC 90nm SP/RVT Low-K process true 3.3V Analog ESD IO cell Library Using 3.3V GOX52 IO
USB 3.1 Gen.1 TYPE-C PHY ; UMC 40nm Logic/Mixed-Mode Low Power/RVT+LVT Process
USB 3.1 Gen.1 TYPE-C PHY ; UMC 40nm Logic/Mixed-Mode Low Power/RVT+LVT Process
Two Port OTG USB2.0 PHY;BOAC version; Wire bonding;UMC 40 nm LP/RVT process.
Two Port OTG USB2.0 PHY;BOAC version; Wire bonding;UMC 40 nm LP/RVT process.
USB 2.0 On-The-Go PHY; UMC 28nm HPC RVT Logic Process
USB 2.0 On-The-Go PHY; UMC 28nm HPC RVT Logic Process
USB 1.1 transceiver support crystal-less mode in USB system ; UMC 55nm eFlash Process
USB 1.1 transceiver support crystal-less mode in USB system ; UMC 55nm eFlash Process
USB1.1 PHY Feature USB 1.1 On-The-Go PHY; UMC 55nm Logic Low Power Low-K Process
USB1.1 PHY Feature USB 1.1 On-The-Go PHY; UMC 55nm Logic Low Power Low-K Process
USB1.1 PHY Feature USB 1.1 On-The-Go PHY; UMC 0.11um HS/AE (AL Enhancement) Logic Process, without internal power clamping circuit
UMC 28nm HPC/Low-K process , 1.25G-16Gbps 4-Lane SERDES
UMC 28nm HPC/Low-K process , 1.25G-16Gbps 4-Lane SERDES
3.3V LVDS Transmitter 16~100MHz; 55nm SP/RVT LowK Logic Process
3.3V LVDS Transmitter 16~100MHz; 55nm SP/RVT LowK Logic Process
2.5V LVDS Transmitter 1.25Gbps; UMC 40nm LP LowK Logic Process.
2.5V LVDS Transmitter 1.25Gbps; UMC 40nm LP LowK Logic Process.
3.3V LVDS Transmitter 700Mbps; UMC 40nm LP LowK Logic Process
3.3V LVDS Transmitter 700Mbps; UMC 40nm LP LowK Logic Process
0.11um LVDS TX I/O PAD ; UMC 0.11um HS/AE (AL Advanced Enhancement) Logic Process
0.11um LVDS TX I/O PAD ; UMC 0.11um HS/AE (AL Enhancement) Logic Process
3.3V FPD-link LVDS Transmitter 16~100MHz; UMC 28nm HPC process
3.3V FPD-link LVDS Transmitter 16~100MHz; UMC 28nm HPC process