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Vendor:
Faraday Technology
Category:
SRAM
UMC 40nm Low Power Process SP-SRAM memory compiler with row redundancy and 213 bit cell
UMC 40nm Low Power Process SP-SRAM memory compiler with row redundancy and 213 bit cell
Overview
UMC 40nm Low Power Process SP-SRAM memory compiler with row redundancy and 213 bit cell
Silicon Options
| Foundry | Node | Process | Maturity |
|---|---|---|---|
| UMC | 40nm | 40nm 400 nm | — |
Specifications
Identity
Part Number
FSH0L_D_SHRED
Vendor
Faraday Technology
Type
Silicon IP
Provider
HQ:
Taiwan
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Frequently asked questions about SRAM IP cores
What is UMC 40nm Low Power Process SP-SRAM memory compiler with row redundancy and 213 bit cell?
UMC 40nm Low Power Process SP-SRAM memory compiler with row redundancy and 213 bit cell is a SRAM IP core from Faraday Technology listed on Semi IP Hub. It is listed with support for umc.
How should engineers evaluate this SRAM?
Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this SRAM IP.
Can this semiconductor IP be compared with similar products?
Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.