Vendor: VeriSilicon Microelectronics (Shanghai) Co., Ltd. Category: Single-Protocol PHY

Samsung 28nm FDSOI 1.8v/1.0v LVDS Transmitter

Samsung 28nm FDS Silicon Proven View all specifications

Key features

  • Process: Samsung 28nm FDSOI process
  • Supply voltage: 2.25V<=VDD25<=2.75V, 0.9V<=VDD10<=1.1V 1.62V<=VDD18<=1.98v
  • Mos device: pfet, nfet, egpfet, egnfet, rpposab
  • Operating current:VDD25<24mA
  • Operating junction temperature: - 40°C ~ +25°C ~ +125°C

Silicon Options

Foundry Node Process Maturity
Samsung 28nm FDS Silicon Proven

Specifications

Identity

Part Number
SEC28FDSOIV18_LVDSTX_05
Vendor
VeriSilicon Microelectronics (Shanghai) Co., Ltd.
Type
Silicon IP

Provider

Learn more about Single-Protocol PHY IP core

VeriSilicon Launches GCNanoOptimaV, a Next-Generation 2.5D GPU IP for Wearables

Featuring dedicated hardware acceleration engines and an optimized memory architecture, GCNanoOptimaV significantly enhances graphics rendering performance and memory efficiency, enabling richer and more responsive graphical user interfaces (GUIs) while addressing the stringent resource constraints of wearable applications.

Frequently asked questions about Single-Protocol PHY IP

What is Samsung 28nm FDSOI 1.8v/1.0v LVDS Transmitter?

Samsung 28nm FDSOI 1.8v/1.0v LVDS Transmitter is a Single-Protocol PHY IP core from VeriSilicon Microelectronics (Shanghai) Co., Ltd. listed on Semi IP Hub. It is listed with support for samsung Silicon Proven.

How should engineers evaluate this Single-Protocol PHY?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this Single-Protocol PHY IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

×
Semiconductor IP