Vendor: eRaytroniks Category: SRAM

High-Speed SRAM and Cache Memory

Advanced cache memory delivering speed, density & efficiency for next-gen AI

Overview

Advanced cache memory delivering speed, density & efficiency for next-gen AI.

Ultra-dense 4T-architecture cache solution on a logic CMOS platform, designed for high-performance, low-power applications. Supports a wide range of computing tasks, including cache, buffering, virtual memory, AI learning and acceleration, CPU/GPU operations, cryptography, and scientific computing.

Key features

  • Available in(nm): 40, 32, 28, 22, 16, 14, 12, 10, 7, 3
  • Customizable capacity: 1 Kb to 100 Mb
  • Temperature Range: -40°C~125°C

Specifications

Identity

Part Number
CA$HERAM®
Vendor
eRaytroniks
Type
Silicon IP

Provider

eRaytroniks
HQ: Taiwan

Learn more about SRAM IP core

A Process-Aware Hybrid Si/IGO Monolithic-3D 6T SRAM with BEOL Pass-Gates for the 2nm Node

The authors propose a monolithic-3D (M3D) 6T SRAM at the 2nm node, integrating BEOL IGO pass-gates (PGs) with an all-silicon nanosheet latch, buried power rails (BPRs), and Ru interconnects. TCAD calibrated to a state-of-the-art double-gate IGO transistor with a tri-layer HfO2/ZrO2/HfO2 (HZH) gate stack is combined with virtual fabrication and 3D parasitic extraction to realize the first process-aware layout of this topology.

Frequently asked questions about SRAM IP cores

What is High-Speed SRAM and Cache Memory?

High-Speed SRAM and Cache Memory is a SRAM IP core from eRaytroniks listed on Semi IP Hub.

How should engineers evaluate this SRAM?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this SRAM IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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