GDDR6X/6 Combo PHY & Controller
The GDDR6X/6 PHY is fully compliant with the JEDEC GDDR6X/6 standard, supporting data rates of up to 20Gbps per pin for PAM2 GDDR…
Overview
The GDDR6X/6 PHY is fully compliant with the JEDEC GDDR6X/6 standard, supporting data rates of up to 20Gbps per pin for PAM2 GDDR6 mode and 24Gbps for PAM4 GDDR6X mode. The GDDR6X/6 interface supports 2 channels, each with 16 bits for a total data width of 32 bits per memory device. With a maximum speed of 20/24Gbps per pin, The GDDR6X/6 Combo PHY delivers a peak bandwidth of up to 80GB/s or 96GB/s per memory device. Designed for advanced FinFET process nodes, this PHY is optimized for seamless integration into cutting-edge applications.
The comprehensive product portfolio also includes full GDS delivery, signal integrity and power integrity (SI/PI) analysis, verification models, prototyping support, and simulation tools. These offerings empower customers to accelerate development cycles, ensure robust performance, and stay ahead in the competitive landscape of high-performance memory solutions.
Key features
- Data rate up to 20Gbps (GDDR6) and 24Gbps (GDDR6X)
- Pseudo open drain (POD‐135) compatible outputs
- Driver strength and ODT auto calibration
- PHY independent auto/software Command Address Training
- PHY independent auto WCK2CK/Read/Write Training
- PHY independent software Read/Write Training
- PHY independent RX VREF Training
- Supports WDBI/RDBI/CABI functions
- Supports EDC QDR/DDR modes
- Rx DFE for data inputs, with receiver characteristics programmable per pin
- Supports both Write and Read CRC
- Per bit Tx and Rx data phase delay and VREF adjustment
- Internal high-performance low-jitter PLL
- Tx de-emphasis EQ and Rx DFE EQ to improve signal integrity
- Supports both Quad data rate (QDR) and double data rate (DDR) data (WCK) modes
- Supports dynamic Read Training/Write Training with auto-refresh synchronization function
- Accommodates Voltage/Temperature timing drift
- Supports independent TX/RX/CMD delay line
- Supports FR4 PCB material
- Optional package/PCB design and SIPI analysis service
- Supports Micron, Samsung, Hynix memory devices
Block Diagram
Benefits
- Fully pre-assembled design, Drop-in hard macro to ease integration and speed time to market
- Zero risk with robust ESD architecture
- Extensive EDA tool support for various design and automation flow
- Optional CKE retention mode permits VDD and all non-essential I/Os to be powered down while retaining the external SDRAMs in self-refresh mode
- Comprehensive observation registers DFX and methods are available to facilitate customers in identifying issues during testing
What’s Included?
- Extensive documentation
- Models
- LIB
- LEF
- Place-and-route abstracts
- LVS netlist
- GDSII files
Specifications
Identity
Files
Note: some files may require an NDA depending on provider policy.
Provider
Learn more about DDR IP core
Breaking the Memory Bandwidth Boundary. GDDR7 IP Design Challenges & Solutions
PCIe 5.0: The universal high-speed interconnect for High Bandwidth and Low Latency Applications Design Challenges & Solutions
How Secure DDR Interfaces Protect DRAM from Memory Attacks
Secure DDR DRAM Against Rowhammer, RAMBleed, and Cold-Boot Attacks
DDR IP Hardening - Overview & Advance Tips
Frequently asked questions about DDR Interface IP
What is GDDR6X/6 Combo PHY & Controller?
GDDR6X/6 Combo PHY & Controller is a DDR IP core from Innosilicon Technology Ltd listed on Semi IP Hub.
How should engineers evaluate this DDR?
Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this DDR IP.
Can this semiconductor IP be compared with similar products?
Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.