General Purpose IO IP, UMC 0.13um LL/FSG process
Faraday Technology
•
HQ:
Taiwan
UMC 0.13um Generic process True 3.3V Generic IO.
- UMC
- 130nm
- LL
Compare 2,955 UMC IP Cores from 31 vendors
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General Purpose IO IP, 5V tolerance, UMC 0.13um LL/FSG process
Faraday Technology• HQ: TaiwanUMC 0.13um Generic process 5V Tolerance IO.
- UMC
- 130nm
- LL
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General Purpose IO IP, UMC 0.11um LL/FSG process
Faraday Technology• HQ: TaiwanUMC 0.11um LL Logic/FSG process true 3.3V Generic IO.
- UMC
- 110nm
- LL
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General Purpose IO IP, 5V tolerance, UMC 0.11um LL/FSG process
Faraday Technology• HQ: TaiwanUMC 0.11um LL Logic/FSG process 5V tolerant Generic IO.
- UMC
- 110nm
- LL
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General Purpose IO IP, UMC 0.11um HS/FSG process
Faraday Technology• HQ: TaiwanUMC 0.11um HS process true 3.3V standard IO.
- UMC
- 110nm
- HS
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General Purpose IO IP, 5V tolerance, UMC 0.11um HS/FSG process
Faraday Technology• HQ: TaiwanUMC 0.11um HS process 5V tolerant standard IO.
- UMC
- 110nm
- HS
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General Purpose IO IP, UMC 0.11um SP/FSG process
Faraday Technology• HQ: TaiwanUMC 0.11um SP/FSG Logic process true 3.3V Generic IO.
- UMC
- 110nm
- SP
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General Purpose IO IP, 5V tolerance, UMC 0.11um SP/FSG process
Faraday Technology• HQ: TaiwanUMC 0.11um SP/FSG Logic process 5V tolerant Generic IO.
- UMC
- 110nm
- SP
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General Purpose IO IP, BOAC (Bonding Over Active Circuit), 5V tolerance, UMC 55nm SP process
Faraday Technology• HQ: TaiwanUMC 55nm SP/RVT Logic process 5VT Generic IO for BOAC.
- UMC
- 55nm
- SP
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Specialty Analog ESD IO IP, 3.3V, UMC 40nm LP process
Faraday Technology• HQ: TaiwanUMC 40nm LP/RVT Logic process, 3.3V Analog ESD IO Cell Library (using 2.5V overdrive 3.3V MOS).
- UMC
- 40nm
- LP
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Specialty Analog ESD IO IP, 1.8V Operations, UMC 28nm HPM process
Faraday Technology• HQ: TaiwanUMC 28nm Logic and Mixed-Mode HPM process, 1.8V Analog ESD IO Cell Library.
- UMC
- 28nm
- HPM
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Specialty Analog ESD IO IP, 1.1V Operations, UMC 40nm LP process
Faraday Technology• HQ: TaiwanUMC 40nm LP/RVT Logic process, 1.1V Analog ESD IO Cell Library.
- UMC
- 40nm
- LP
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Specialty Analog ESD IO IP, 0.9V Operations, UMC 28nm HPM process
Faraday Technology• HQ: TaiwanUMC 28nm Logic and Mixed-Mode HPM process, 0.9V Analog ESD IO Cell Library.
- UMC
- 28nm
- HPM
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Specialty Analog ESD IO IP, UMC 0.18um LL process
Faraday Technology• HQ: TaiwanUMC 0.18um LL Logic process 3.3V Analog ESD IO set Cell Library.
- UMC
- 180nm
- LL
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Specialty Analog ESD IO IP, UMC 0.18um LL process
Faraday Technology• HQ: TaiwanUMC 0.18um LL Logic process 1.8V Analog ESD IO set Cell Library.
- UMC
- 180nm
- LL
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ROM Compiler IP, UMC 90nm CIS process
Faraday Technology• HQ: TaiwanUMC 90nm CMOS Image Sensor process 1P3M Via ROM compiler.
- UMC
- 90nm
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ROM Compiler IP, UMC 55nm LP process
Faraday Technology• HQ: TaiwanUMC 55nm LP Logic process Via1 ROM memory compiler.
- UMC
- 55nm
- LP
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ROM Compiler IP, UMC 55nm eHV process
Faraday Technology• HQ: TaiwanUMC 55nm eHV PeriHVT Via1 ROM compiler.
- UMC
- 55nm
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ROM Compiler IP, UMC 55nm eFlash process
Faraday Technology• HQ: TaiwanUMC 55nm eFlash process with peripheral HVT Pcode ROM compiler.
- UMC
- 55nm
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ROM Compiler IP, UMC 40nm LP process
Faraday Technology• HQ: TaiwanUMC 40 LP/RVT Low-K Logic process Via1 ROM memory compiler.
- UMC
- 40nm
- LP