Overview
NAND Flash Controller has a built-in AHB Slave Interface, handles all sorts of Nand Flash commands, address & data sequences. It allows the users to access the NAND flash memory simply by reading or writing into the Operational registers & the data buffer.
It consists of four major blocks:
- AHB Slave I/F: It consists of the AHB FSM & Operational registers.
- Synchronization Module (Sync): This block has handshake logic to communicate with the AHB interface and with the flash interface. To increase the throughput a single page size buffer is used for the data transactions.
- Error Correcting Code (ECC): This block generates & compares ECC (user programmable) for every page program & page read to/ from the Nand Flash respectively. It uses Hamming Code algorithm for single bit error correction and two or more bit error detection (SECDED). It calculates 28 bit ECC for every 512 word data.
- NAND Flash Interface: This block handles all sorts of Nand Flash commands, address, data sequences, and manages all the hardware protocols & flash timing requirements.
Learn more about NAND Flash IP core
ONFI 5.2 is the latest generation of ONFI device standard, published in 2024. ONFI 5.2 devices have added several major features over previous generation ONFI standards.
Here, the authors propose a concealable PUF using V-NAND flash memory by generating PUF data through weak Gate-Induced-Drain-Leakage (GIDL) erase. The differences in doping depth among V-NAND strings arising from the fabrication cause variations in GIDL erase performance. The resulting V-NAND PUF demonstrated ideal security characteristics while maintaining 100% accuracy under variations in read count and temperature.
Intel-Micron have recently introduced a scalable planar NAND cell for the 20nm technology [1]. Replacement of conventional wrap floating gate (FG) NAND memory cell with a High-K/Metal gate planar cell that can scale to the 20nm node and beyond was a significant challenge and required comprehensive material and cell exploration and optimization. This paper discusses some of the fundamental cell design issues considered and addressed to arrive at this planar cell technology including the reasoning behind choosing the planar floating gate cell over the nano-crystal cell, and the nitride cell.
Eric Esteve