Vendor: Sofics Category: GPIO

1.8V Capable GPIO on Samsung Foundry 4nm FinFET

The 1.8V capable GPIO is an IP macro for on-chip integration.

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Samsung 4nm SF4 View all specifications

Overview

The 1.8V capable GPIO is an IP macro for on-chip integration. It is a 1.8V general purpose I/O built with a stack of 1.2V MOS FINFET devices. It is controlled by 0.75V (core) signals.

Supported features include core isolation, output enable and pull enable. Extra features such as input enable/disable, programmable drive strength and pull select, can be supported upon request.

By default, a 2kV HBM ESD protection is included. This is however easily scaled to any desired level. This specific IP macro is designed in Samsung 4nm FINFET, and can be ported to other technologies upon request using Sofics inhouse design tool flow.

Key features

  • Overvoltage tolerant design 
  • Deep N-Well 
  • Core domain isolation 
  • Vertical orientation 
  • Temp range -40°C to 125°C TJ 
  • 50kΩ pullup/pulldown 
  • Integrated 2kV HBM ESD 
  • 5A of CDM current 
  • 0.75V digital interface at the core side 
  • Bias generation circuit can be shared over multiple I/O instances

Block Diagram

1.8V Capable GPIO on Samsung Foundry 4nm FinFET block diagram

Silicon Options

Foundry Node Process Maturity
Samsung 4nm SF4 —

Specifications

Identity

Part Number
1.8V Capable GPIO on Samsung Foundry 4nm FinFET
Vendor
Sofics
Type
Silicon IP

Files

Product Sheet Download

Note: some files may require an NDA depending on provider policy.

Provider

Sofics
HQ: Belgium
Contact Sofics

Learn more about GPIO IP core

GPIO Solutions for CERN’s Radiation-Hardened Applications

For over a decade, Sofics has collaborated with CERN, the European Organization for Nuclear Research. Sofics has delivered advanced GPIO cells tailored for radiation-hardened applications, supporting CERN’s groundbreaking particle physics experiments.

Ensuring reliability in Advanced IC design

To complete our task as engineers we rely on the tools we use. We collaborated with Siemens EDA solutions back in 2025 on a webinar about how we use their tools to develop our designs and layouts.

Not all overvoltage tolerant GPIOs are the same

Most foundries provide GPIO libraries to their fabless customers. These libraries contain different elements like supply/ground pads, analog I/Os, digital I/Os, corner cells, filler cells, power-on-reset circuits. Frequently the foundry includes cells for different voltage domains. In 40nm CMOS the IC designer can use cells for 1.8V, 2.5V and 3.3V for instance.

Frequently asked questions about GPIO Pad Library IP cores

What is 1.8V Capable GPIO on Samsung Foundry 4nm FinFET?

1.8V Capable GPIO on Samsung Foundry 4nm FinFET is a GPIO IP core from Sofics listed on Semi IP Hub. It is listed with support for samsung.

How should engineers evaluate this GPIO?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this GPIO IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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