TSMC looks to 5nm MRAM, plans first European design centre
By Nick Flaherty, eeNews Europe | May 27, 2025
Taiwanese foundry TSMC is to set up its first design centre in Europe and is looking at a significant leap in memory technology for automotive applications.
The EU Design Centre (EUDC) will be based in Munich is expected to focus on automotive, but will also support chip designs for industrial applications, artificial intelligence (AI), telecoms and the Internet of things (IoT).
With this in mind, TSMC has qualified its 28nm resistive RRAM memory for automotive applications, with a 12nm version expected to meet the same stringent automotive quality requirements with a 6nm version planned. It also planning a 5nm MRAM magnetic memory.
To read the full article, click here
Related Semiconductor IP
- Band-Gap Voltage Reference with dual 2µA Current Source - X-FAB XT018
- 250nA-88μA Current Reference - X-FAB XT018-0.18μm BCD-on-SOI CMOS
- UCIe D2D Adapter & PHY Integrated IP
- Low Dropout (LDO) Regulator
- 16-Bit xSPI PSRAM PHY
Related News
- Moortec Opens New European Design Centre in Poland
- M31 Launches ONFi5.1 I/O IP on TSMC 5nm Process
- M31 Launches USB4 IP for TSMC 5nm Process
- TSMC to Open EU Design Center in Munich in Q3
Latest News
- POLYN Technology Announces Tapeout of Automotive Chip
- QuickLogic Establishes New Banking Relationship and Secures $10 Million Revolving Credit Facility
- TES is extending its PMU IP portfolio for X-FAB’s XT018 - 0.18µm BCD-on-SOI technology.
- RF Front-End Modules & Components IP Trends – Q1 2026 Monitoring Release
- IC Manage Advances GDP-AI for Custom IC Design with Virtuoso