Tsinghua to Build $30 Billion Memory Fab in China
Dylan McGrath, EETimes
1/20/2017 01:50 AM EST
Tsinghua, which has acquired several chip vendors and facilities over the past few years, is also building a $24 billion memory fab in the Chinese city of Wuhan, announced last March.
Tsinghua said it plans to build DRAM and 3D NAND flash at the Nanjing fab. The first phase of the project will cost about $10 billion and result in the production capacity to produce 100,000 wafers per month, the company said. No timetable was provided for the project.
In 2015, Tsingua made an unsuccessful bid to acquire U.S. memory chip vendor Micron Technology Inc. for $23 billion.
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