Low-Power Apps, Foundries Eye Emerging Memories
Despite opportunities, higher densities remain a challenge for most emerging memories.
By Gary Hilson, EETimes (December 19, 2022)
Emerging memories are entering a new phase, but without a high-profile phase-change memory (PCM) that was responsible for the segment’s growth in previous years.
Intel announced it was sunsetting Optane, its PCM-based 3D XPoint technology, just as analysts Thomas Coughlin and Jim Handy were wrapping their annual report, which meant some last-minute revisions to “Emerging Memories Enter Next Phase.”
“Optane was on its way out and we still had a big Optane part in the report,” Handy told EE Times in an interview.
Without Optane, the thrust of the annual joint report from Coughlin Associates and Handy’s Objective Analysis is that the next phase for emerging memories is the major foundries — including Samsung, TSMC, and GlobalFoundries — shipping production parts that have either resistive random-access memory (ReRAM) or magnetoresistive RAM (MRAM) in them.
To read the full article, click here
Related Semiconductor IP
- MIL-STD-1553 Controller IP
- UFS 5.x Device IP
- UCIe 3.x Controller IP
- Ethernet 800G PCS IP
- CHI to UCIe Bridge IP
Related News
- Virage Logic Expands Distribution Model; 'First Mover' Status Among Emerging Foundries Underscores Market Leadership
- Emerging Memories: Ship First, Perfect Later
- X-FAB Introduces New Low-Power eFlash Block Optimized for Energy Harvesting & IoT Devices
- Researchers Explore Emerging Memories for AI
Latest News
- StarFive and LECARC Forge Partnership to Co-Develop RISC-V Server CPUs and Seize New Opportunities in the Agentic AI Era
- ASICLAND Selected as SK hynix’s Partner for Next-Gen eSSD Development, Establishing a ‘K-Semiconductor Win-Win’ Model
- onsemi to Acquire Synaptics to Enable the Next Generation of Intelligent Systems for Physical AI
- EdgeAI Licensed Andes Technology CPU IP to Power Next-Generation Edge AI Neuromorphic Solution
- Jim Keller: ‘AI Still Obeys the Old Laws of Compute’