Leti Strains to Improve FDSOI
Peter Clarke
12/17/2015 10:44 AM EST
STMicroelectronics and Globalfoundries are championing the FDSOI process as a means to achieve world-class energy efficiency in leading edge integrated circuits without the complexity and expense of FinFET manufacturing.
To read the full article, click here
Related Semiconductor IP
- DSP-Based 112G SerDes
- XTAL oscillator in TSMC-7nm
- GPU
- V-by-One Verification IP
- AI model compression IP
Related News
- Leti and STMicroelectronics Demonstrate Order-of-Magnitude-Faster FD-SOI Ultra-Wide-Voltage Range DSP
- Leti launches new Silicon Impulse FD-SOI Development Program, to Help Designers Broaden the Use of FD-SOI for Low-power Applications
- LETI Develops 3D Network-on-Chip to Improve High-Performance Computing
- Chameleon cuts staff, plans to improve processor
Latest News
- Arteris Deployed by Speedata for Data Center Compute
- Siemens to acquire Defacto Technologies to complement its EDA portfolio with automated SoC design creation
- Mach42 Completes £7M Funding Round, Led by IP Group With Investment From BGF and Foresight Group
- ELECTRA IC Unveils Comprehensive IP Core Suite for Next-Generation Post-Quantum Cryptography
- CAST Enhances Serial Memory Controller IP with Encryption, Low-Power, and ASIL-Ready Options