Intel, TSMC to detail 2nm processes at IEDM
By Peter Clarke, eeNews Europe (October 8, 2024)

Intel’s attempts to get back to the leading-edge in chipmaking and foundry TSMC’s steps defining that leading-edge will be on show at this year’s International Electron Devices Meeting (IEDM) coming up in December, in San Francisco.
In a late news paper, researchers from TSMC will unveil the N2 manufacturing process, which is a nominal 2nm process designed for computing in AI, mobile and high-performance computing. In the following paper in the same session Intel engineers will provide details of scaling RibbonFETs, the name Intel gives to its nanosheet transistors.
To read the full article, click here
Related Semiconductor IP
- TSMC 7nm 0V75 / 0V9 ESD Local Clamp – Low Cap
- TSMC 65nm 3V3 ESD Local Clamp – Rad Hard
- TSMC 5nm 1V8, 1.2V and 0.9V ESD Local Protection – Low Cap
- TSMC 3nm 3V3 ESD Local Clamp
- TSMC 3nm 1V2 ESD Local Clamp – Low Capacitance
Related News
- Analog Bits to Demonstrate IP Portfolio on TSMC 3nm and 2nm Processes at TSMC 2025 Technology Symposium
- Alphawave Semi Tapes Out Breakthrough 36G UCIe™ IP on TSMC 2nm, Unlocking Foundational AI Platform IP on Nanosheet Processes
- Intel and Cadence Expand Partnership to Enable Best-in-Class SoC Design on Intel's Advanced Processes
- Siemens qualifies industry-leading IC design solutions for Intel Foundry processes
Latest News
- First Benchmarks Revealed for Jalapeño, OpenAI’s Clean-Sheet General Purpose AI Accelerator ASIC
- MIPS Leads Open Standards Development for Physical AI Platforms as RISC-V International Premier Member
- SEALSQ’s Subsidiary IC'Alps Advances QASIC Roadmap for Sovereign, Quantum-Resistant Application-Specific Integrated Circuits
- NVMe 2.4 Update Adds Post-Quantum Security, Power Controls
- Agentrys Raises $24.5 Million to Build Agentic Design Automation for Chipmakers