Why Opt For Chip Stack, FD-SOI in Image Sensors?
Junko Yoshida, EETimes
1/28/2016 02:30 PM EST
MADISON, Wis. -- If Samsung’s latest smartphone TV commercial (which touts a number of superior camera features and ends with a tagline -- “It's Not a Phone, It's a Galaxy”) is any indication, the ingredient that matters most in smartphones today isn’t the phone. It’s the camera.
As camera functions become essential to differentiate embedded devices, designers of CMOS image sensors (CIS) find themselves wrestling with growing demands on multiple fronts – image quality, size of camera modules and overall cost.
Over the last few years, CIS vendors have embraced chip stacking. Under that option, a CIS is stacked with an image signal processor (ISP). As the next step, at least two major players, Sony and Samsung, are reportedly pondering the use of FD-SOI wafers in manufacturing ISPs for a chip stacked CIS.
To read the full article, click here
Related Semiconductor IP
- Band-Gap Voltage Reference with dual 2µA Current Source - X-FAB XT018
- 250nA-88μA Current Reference - X-FAB XT018-0.18μm BCD-on-SOI CMOS
- UCIe D2D Adapter & PHY Integrated IP
- Low Dropout (LDO) Regulator
- 16-Bit xSPI PSRAM PHY
Related News
- Sony To Use FD-SOI in Stacked Image Sensors
- CMOS Image Sensors See Higher Growth from Greater Diversity of Uses
- Sony Acquires Belgian Innovator of Range Image Sensor Technology, Softkinetic Systems S.A., in its Push Toward Next-Generation Range Image Sensors and Solutions
- CMOS Image Sensors Expected To Set Record-High Sales for Another Five Years
Latest News
- SEMI Reports Worldwide Silicon Wafer Shipments Increase 13% Year-on-Year in Q1 2026
- POLYN Technology Announces Tapeout of Automotive Chip
- QuickLogic Establishes New Banking Relationship and Secures $10 Million Revolving Credit Facility
- TES is extending its PMU IP portfolio for X-FAB’s XT018 - 0.18µm BCD-on-SOI technology.
- RF Front-End Modules & Components IP Trends – Q1 2026 Monitoring Release