Fab Joint Venture Seen for 200 mm
U.S. pitched for making analog, power, discrete products
By Rick Merritt, EETimes
May 31, 2019
SAN JOSE, Calif. — The next big fab may be a joint venture for making analog and discrete products on 200-mm wafers, far from the bleeding edge in semiconductors. That’s the view of Stephen Rothrock, who spent 20 years putting together fab deals and is bullish that the U.S. could get the next one.
Overall, 200-mm fabs and tools are in demand, while newer 300-mm facilities and tools are in oversupply, said Rothrock, chief executive of ATREG. He thinks that upper New York State is well-positioned to expand its emerging semiconductor sector.
“We haven’t seen a new 200-mm fab in the U.S. yet, but I think it’s a good possibility in the next 18 to 24 months — it could be for analog, discrete, and power products, and my guess is it will go into New York,” he said, citing investments already made there by GlobalFoundries and a Danish assembly and test company.
To read the full article, click here
Related Semiconductor IP
- NPU IP
- JPEG XL Encoder
- I2C Master/Slave Controller Core
- NVMe Validation Test Suite
- Hybrid Memory Cube Verification IP
Related News
- Intel to Repurchase 49% Equity Interest in Ireland Fab Joint Venture
- STMicroelectronics and NXP unveil management team for joint venture
- IBM and Infineon divest joint venture Altis Semiconductor
- SMIC and Hubei Science & Technology Investment Group Sign Joint Venture Agreement in Wuhan
Latest News
- GF unveils roadmap to deliver the world’s most advanced FD-SOI platform for Physical AI
- GlobalFoundries marks Dresden expansion milestone, announces next-generation platform for Physical AI
- TSMC September 2026 Revenue Report
- Lattice Collaborates with Arm to Advance Secure, Adaptable AI Data Center Infrastructure
- ZLG Selects CAST CAN XL and TSN IP for Next-Generation Vehicle-Network Development and Test Tools