ISSCC panel sees challenges at 20-nm
Mark LaPedus, EETimes
2/23/2011 9:02 PM EST
SAN FRANCISCO – After some debate, there is finally some consensus at the 22-/20-nm logic node-at least among leading-edge foundries.
During a panel session at the 2011 International Solid-State Circuits Conference (ISSCC) here, IBM, Globalfoundries and TSMC all agreed that they would extend planar bulk CMOS to the 22-/20-nm node. In other words, don’t expect foundries to embrace FinFETs, fully depleted SOI, multi-gate transistors or other newfangled structures at 22-/20-nm.
To read the full article, click here
Related Semiconductor IP
- Band-Gap Voltage Reference with dual 2µA Current Source - X-FAB XT018
- 250nA-88μA Current Reference - X-FAB XT018-0.18μm BCD-on-SOI CMOS
- UCIe D2D Adapter & PHY Integrated IP
- Low Dropout (LDO) Regulator
- 16-Bit xSPI PSRAM PHY
Related News
- Standards group VSIA focuses on adoption challenges
- SIA road map defines performance-SoC challenges
- Object-based video coding challenges MPEG
- Verisity, 0-In and Novas Announce Strategic 'VPA' Collaboration to Address Nanometer SoC Verification Challenges
Latest News
- SEMI Reports Worldwide Silicon Wafer Shipments Increase 13% Year-on-Year in Q1 2026
- POLYN Technology Announces Tapeout of Automotive Chip
- QuickLogic Establishes New Banking Relationship and Secures $10 Million Revolving Credit Facility
- TES is extending its PMU IP portfolio for X-FAB’s XT018 - 0.18µm BCD-on-SOI technology.
- RF Front-End Modules & Components IP Trends – Q1 2026 Monitoring Release