When TSMC advocates FD-SOI...
I found a patent recently (May,14 2013) granted to TSMC “Planar Compatible FDSOI Design Architecture”, the following sentences, directly extracted from this patent, advertise FDSOI design better than a commercial promotion! “Devices formed on SOI substrates offer many advantages over their bulk counterparts, including absence of reverse body effect, absence of latch-up, soft-error immunity, and elimination of junction capacitance typically encountered in bulk silicon devices. SOI technology therefore enables higher speed performance, higher packing density, and reduced power consumption.” Nothing new here for Semiwiki readers… except that this enumeration of the advantages of SOI technology in respect with bulk planar is coming from TSMC…
To read the full article, click here
Related Semiconductor IP
- 12-bit, 400 MSPS SAR ADC - TSMC 12nm FFC
- 3.3V Capable GPIO on TSMC 28nm RF HPC+
- 1.2V Thin Oxide GPIO on TSMC 28nm RF HPC+
- LDO Voltage Regulator, 250 mA, TSMC N3P
- LDO Voltage Regulator, Adjustable 0.45 V to 0.9 V Output, 30 mA, TSMC N3P
Related Blogs
- TSMC Tops Intel, Samsung in Capacity!
- TSMC Reports Second Highest Quarterly Profit!
- TSMC Ponders One-Customer Fabs
- ARM and TSMC Beat Revenue Expectations Signaling Strength in a Weakening Economy?
Latest Blogs
- From Bug Hunting to Engineering Methodology: Lessons from AI-Driven Development
- Manufacturing Intelligence: Turning EDA Data into Trusted Action
- Execute-in-Place: Getting More from Embedded NVM
- Rethinking RTL flows with AI-driven hybrid formal verification
- Arm and NVIDIA: Building the trusted compute foundation for the agentic AI era