Can FD-SOI Change the Rule of Game?
It appears so. Why there is so much rush towards FD-SOI in recent days? Before talking about the game, let me reflect a bit on the FD-SOI technology first. The FD-SOI at 28nm claims to be the most power-efficient and lesser cost technology compared to any other technology available at that node. There are many other advantages from a technology standpoint which we have heard over a year or two. For example, simplicity of process, no channel doping, excellent electrostatic control of the channel, and back biasing with extremely thin box. These technology aspects translate into limited short channel effect, low DIBL (Drain Induced Barrier Lowering), minimum junction capacitance and diode leakage, lowest leakage current, and excellent voltage threshold variability. The result is – the device can operate at multiple voltages and multiple frequencies. It can be used for high-performance (at 28nm at this time) as well as ULP (Ultra-Low-Power) applications.
To read the full article, click here
Related Semiconductor IP
- SpaceWire Node IP core
- nQrux Secure Boot
- 4K/8K Multiformat IP supporting AV2 decoder
- Ultra Ethernet MAC & PCS 100G/200G/400G/800G
- Ethernet PCS 100G/200G/400G/800G/1.6T
Related Blogs
- The Hidden Threat in Analog IC Migration: Why Electromigration rules can make or break your next tapeout
- Can "Less than Moore" FDSOI provides better ROI for Mobile IC?
- FD-SOI Can Deliver Leading-Edge European IC Process Technology
- FD-SOI: Can I Design It and Manufacture It?
Latest Blogs
- A Repeatable Framework for Hardware Security Assurance
- Inside the SiFive Performance™ P570 Gen 3: High Performance Efficiency for Next-Generation Consumer and Commercial Applications
- What the steam engine can teach us about modern chip design
- Automotive silicon in the era of AI, functional safety, and cybersecurity
- JPEG XS Officially Joins GenICam, The Machine Vision Standard Managed By EMVA