Dolphin Integration introduces a new generation of SpRAM at 55 nm
Grenoble, France – November 26, 2012 -- Dolphin Integration is releasing RHEA, the latest memory architecture of its SpRAM family, for power and cost sensitive SoCs at 55 nm TSMC technological processes.
The SpRAM RHEA generator leaves far behind any competing SpRAM
Illustration with 4kx32 memory cut

The SpRAM RHEA not only provides the best combination of density, speed and power consumption:
- Up to 30% denser than standard High-Speed memory generator while maintaining an equivalent speed range
- 10% less consuming and 9% denser compared with traditional Low-Power and High-Density memories, but RHEA also includes a crucial functionality:
- Data retention mode both at 1.2 V and 0.77 V for ultimate leakage savings
The SpRAM generator RHEA is specially suited for consumer multimedia applications such as MP3 player, E-reader, or game console.
For more information, feel free to download the Presentation Sheet or to contact Dolphin’s Library Marketing Manager at ragtime@dolphin.fr to get access to the SpRAM RHEA FE generator
About Dolphin Integration
Dolphin Integration is up to their charter as the most adaptive and lasting creator in the Microelectronics Design Industry to "enable mixed signal Systems-on-Chip". It stars a quality management stimulating reactivity for innovation as well as independence and partnerships with Foundries. Their current mission is to supply worldwide customers with fault-free, high-yield and reliable sets of CMOS Virtual Components, such as mixed signal high-resolution converters for audio and measurement applications, Libraries of memories and standard cells, Power management networks, Microcontrollers. The strategy is to follow product launches with evolutions addressing future needs, emphasizing resilience to noise and drastic reductions of power-consumption at SoC level, thanks to their own missing EDA solutions enabling Support Engineering with Application Hardware Modeling as well as early Power and Noise assessment, plus engineering assistance for Risk Control
Related Semiconductor IP
- NFC wireless interface supporting ISO14443 A and B with EEPROM on SMIC 180nm
- DDR5 MRDIMM PHY and Controller
- RVA23, Multi-cluster, Hypervisor and Android
- HBM4E PHY and controller
- LZ4/Snappy Data Compressor
Related News
- Dolphin Integration announces the availability of the new generation of Foundry Sponsored SpRAM generator at 55 nm
- Dolphin Integration announces the availability of the new generation of SpRAM generator at 90 nm and 55 nm eFlash
- Do not miss the Green Thursday offering for ultra Low-Power SoCs at 55 nm
- Ultra-low power memory generators silicon proven at TSMC 55 nm uLP and uLP eFlash
Latest News
- CAST Releases First Dual LZ4 and Snappy Lossless Data Compression IP Core
- Arteris Wins “AI Engineering Innovation Award” at the 2025 AI Breakthrough Awards
- SEMI Forecasts 69% Growth in Advanced Chipmaking Capacity Through 2028 Due to AI
- eMemory’s NeoFuse OTP Qualifies on TSMC’s N3P Process, Enabling Secure Memory for Advanced AI and HPC Chips
- AIREV and Tenstorrent Unite to Launch Advanced Agentic AI Stack