SMIC 130nm EEPROM Standard digital,analog, oscillator IO and PCI IO
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- SMIC
- 130nm
- G
- In Production
Semiconductor Manufacturing International Corporation ("SMIC"; NYSE: SMI; SEHK: 981) is one of the leading semiconductor foundries in the world and the largest and most advanced foundry in mainland China. SMIC provides integrated circuit (IC) foundry and technology services at 0.35-micron to 28-nanometer. Headquartered in Shanghai, China, SMIC has a 300mm wafer fabrication facility (fab) and a 200mm mega-fab in Shanghai; a 300mm mega-fab in Beijing and a majority owned 300mm fab for advance nodes under development; a 200mm fab in Tianjin; and a 200mm fab project under development in Shenzhen. SMIC also has marketing and customer service offices in the U.S., Europe, Japan, and Taiwan, and a representative office in Hong Kong.
SMIC 130nm EEPROM Standard digital,analog, oscillator IO and PCI IO
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SMIC 110nm Mix-signal (Rvt) high density standard cell library.
SMIC 110nm Mix-signal (Rvt) high density standard cell library.
SMIC 110nm Mixed Signal UHD LVT Process Standard Cell Library.
SMIC 110nm Mixed Signal UHD HVT Process Standard Cell Library.
0.11um high density VIA ROM compiler.
0.11um high density VIA ROM compiler.
SMIC 110nm Mixed Signal UHD RVT Process Standard Cell Library.
0.11um high density Dual-Port SRAM compiler
0.11um high density Dual-Port SRAM compiler
SMIC 110nm G Standard digital, analog and oscillator IO
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Transition cells for 40nmLL IO libraries
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Standard digital, analog and oscillator IO
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Standard digital, analog and oscillator IO
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Single power supply 1.5V 16KB EEPROM
16KB EEPROM, single power supply 1.5V
Programmable 8 level pull-up/down resistor
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Programmable 4 level pull-up/down resistor
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Output Voltage Regulator: 1.1V, Input Voltage:2.97V ~ 3.63V
Output Voltage:1.1V, Input Voltage:2.97V ~ 3.63V, Output Loading:100mA.
Output Voltage Regulator: 1.1V, Input Voltage:2.4V ~ 3.63V
Output Voltage:1.1V, Input Voltage:2.4V ~ 3.63V, Output Loading:100mA.
Low-cap high-speed RF analog IO
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LDO for 40nm eFuse 3.3V application(LDO + eFuse)
LDO for 40nm eFuse 3.3V application(LDO + eFuse)
IO / core power supply: 3.3V / 1.1V
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