Specialty OSC IO IP, UMC 90nm LL process
Faraday Technology
•
HQ:
Taiwan
UMC 90nm LL/RVT process 2.5V low frequency OSC Pad.
- UMC
- 90nm
- LL
Compare 2,534 Faraday Technology IP Cores from 1 vendors
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Specialty OSC IO IP, UMC 90nm LL process
Faraday Technology• HQ: TaiwanUMC 90nm LL/RVT process 2.5V high frequency OSC Pad.
- UMC
- 90nm
- LL
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Specialty OSC IO IP, 1MHz to 66MHz, UMC 55nm LP process
Faraday Technology• HQ: TaiwanUMC 55nm LP/RVT Logic process OSC High IO Library.
- UMC
- 55nm
- LP
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Specialty OSC IO IP, BOAC (Bonding Over Active Circuit), UMC 40nm LP process
Faraday Technology• HQ: TaiwanUMC 40nm LP/RVT Logic process high frequency OSC BOAC IO.
- UMC
- 40nm
- LP
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LVDS Transmitter IP, 85MHz, UMC 55nm SP process
Faraday Technology• HQ: Taiwan1.8V/3.3V 85MHz 35:5 LVDS Transmitter, UMC 0.18um GII Logic process.
- UMC
- 55nm
- SP
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LVDS Transmitter IP, 700Mbps, UMC 90nm SP process
Faraday Technology• HQ: Taiwan3.3V LVDS Transmitter 700Mbps, UMC 55nm SP/RVT Low-K process.
- UMC
- 90nm
- SP
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LVDS Transmitter IP, 700Mbps, UMC 55nm SP process
Faraday Technology• HQ: Taiwan2.5V LVDS Transmitter 700Mbps, UMC 40nm LP Low-K Logic process.
- UMC
- 55nm
- SP
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LVDS Transmitter IP, 700Mbps, UMC 0.13um SP/FSG process
Faraday Technology• HQ: Taiwan3.3V LVDS Transmitter 700Mbps, UMC 90nm SP/RVT low-L process.
- UMC
- 130nm
- SP
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LVDS Transmitter IP, 1200Mbps, UMC 55nm SP process
Faraday Technology• HQ: Taiwan1.8V Sub-LVDS Transmitter 1200Mbps, UMC 40nm LP/RVT Logic process.
- UMC
- 55nm
- SP
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LVDS Transmitter IP, 8MHz - 100MHz, 4 channels, UMC 0.18um G2 process
Faraday Technology• HQ: Taiwan3.3V 4 channel LVDS Transmitter 8~100MHz, UMC 90nm SP/RVT Low-K process.
- UMC
- 180nm
- G
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LVDS Receiver IP, 20MHz - 135MHz , UMC 0.18um HS/FSG process
Faraday Technology• HQ: Taiwan20M~135MHz DLL-based LVDS RX, UMC 0.13um HS/FSG process.
- UMC
- 180nm
- HS
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Specialty DDR IO IP, DDR2/DDR1/MDDR, UMC 0.11um HS/AE process
Faraday Technology• HQ: TaiwanUMC 0.11um AE/HS Logic process DD1/DDR2 combo MDDR IO Cell Library.
- UMC
- 110nm
- HS
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General Purpose Multi-Voltage IO IP, 1.8V/2.5V/3.3V Operations, UMC 55nm eFlash process
Faraday Technology• HQ: TaiwanUMC 55 nm Embedded Flash and Embedded E2PROM Low Power Low-K Split-Gate process 1.8V/2.5V/3.3V Multi-Voltage BOAC IO Cell Library.
- UMC
- 55nm
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General Purpose Multi-Voltage IO IP, 1.8V/2.5V/3.3V Operations, UMC 40nm LP process
Faraday Technology• HQ: TaiwanUMC 40nm LP/RVT Logic process 1.8V/2.5V/3.3V Multi-Voltage BOAC IO Cell Library.
- UMC
- 40nm
- LP
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Faraday Technology• HQ: Taiwan
UMC 40nm LP/RVT Logic process 5V Tolerance Generic POC IO with BOAC solution.
- UMC
- 40nm
- LP
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General Purpose IO IP, BOAC (Bonding Over Active Circuit), UMC 28nm HLP process
Faraday Technology• HQ: TaiwanUMC 28nm Logic and Mixed-Mode HLP/RVT process 1.8V BOAC IO Cell Library (with customized PU/PD function).
- UMC
- 28nm
- HLP
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General Purpose IO IP, UMC 90nm SP process
Faraday Technology• HQ: TaiwanUMC 90nm SP/RVT Logic process true 1.0/3.3V standard IO Cell Library (3.3V Generic IO).
- UMC
- 90nm
- SP
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General Purpose IO IP, UMC 90nm SP process
Faraday Technology• HQ: TaiwanUMC 90nm SP/RVT Logic process true 1.0/3.3V standard IO Cell Library (3.3V Analog IO).
- UMC
- 90nm
- SP
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General Purpose IO IP, True 3.3V, UMC 90nm SP process
Faraday Technology• HQ: TaiwanUMC 90nm SP/RVT process true 3.3V standard IO Cell Library Using 3.3V GOX52 IO.
- UMC
- 90nm
- SP
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General Purpose IO IP, UMC 90nm SP process
Faraday Technology• HQ: TaiwanUMC 90nm SP/RVT Logic process TRUE 2.5V Generic IO Library.
- UMC
- 90nm
- SP