Vendor: VeriSilicon Microelectronics (Shanghai) Co., Ltd. Category: GPIO

SMIC18 General process, Multi-Voltage IO with high voltage voltence

SMIC18 General process, Multi-Voltage IO, driver current: 2mA~16mA when 3.3v IO supply

SMIC 180nm G Silicon Proven View all specifications

Overview

SMIC18 General process, Multi-Voltage IO, driver current: 2mA~16mA when 3.3v IO supply

Key features

  • SMIC 0.18um Logic 1P6M Salicide 1.8V/3.3V process
  • Supports a broad range of IO power supply from 1.62V to 3.3V
  • Supports power-on sequence control
  • Supports to selectively enable both input and output
  • Supports high voltage tolerance
  • Supports configurable output driving capability (i.e., from 2mA ~16mA at 3.3V power supply) with selective slew rate control
  • Supports configurable pull up and pull down resistor
  • Supports programmable CMOS or Schmitt input threshold voltage
  • Suitable for four, five, or six metal layers of physical design ; Easy interface with VeriSilicon GSMC 0.18um process standard

Silicon Options

Foundry Node Process Maturity
SMIC 180nm G Silicon Proven

Specifications

Identity

Part Number
SMIC18_MULTIO_DUP_07
Vendor
VeriSilicon Microelectronics (Shanghai) Co., Ltd.
Type
Silicon IP

Provider

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Frequently asked questions about GPIO Pad Library IP cores

What is SMIC18 General process, Multi-Voltage IO with high voltage voltence?

SMIC18 General process, Multi-Voltage IO with high voltage voltence is a GPIO IP core from VeriSilicon Microelectronics (Shanghai) Co., Ltd. listed on Semi IP Hub. It is listed with support for smic Silicon Proven.

How should engineers evaluate this GPIO?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this GPIO IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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