Vendor: VeriSilicon Microelectronics (Shanghai) Co., Ltd. Category: GPIO

SMIC18 General process, Multi-Voltage IO, High ESD perfermance

SMIC18 General process, Multi-Voltage IO, High ESD perfermance

SMIC 180nm G Silicon Proven View all specifications

Overview

SMIC18 General process, Multi-Voltage IO, High ESD perfermance

Key features

  • SMIC 0.18um Logic 1P6M Salicide 1.8V/3.3V process
  • Support configurable output driving capability with selective slew rate control
  • Support configurable pull up and pull down resistor
  • Support both CMOS and Schmitt input
  • Support both inline and staggered IO pads
  • Suitable for four, five, six metal layers physical design
  • Easy interface with VeriSilicon SMIC 0.18um process standard I/O libraries
  • High ESD perfermance:7KV

What’s Included?

  • Databook in electronic format
  • Verilog models and Synopsys synthesis models
  • Candence Silicon Ensenble Abstracts (LEF), Avanti! Apollo data, GDS II, LVS netlist

Silicon Options

Foundry Node Process Maturity
SMIC 180nm G Silicon Proven

Specifications

Identity

Part Number
SMIC18_MULTIO_03
Vendor
VeriSilicon Microelectronics (Shanghai) Co., Ltd.
Type
Silicon IP

Provider

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Frequently asked questions about GPIO Pad Library IP cores

What is SMIC18 General process, Multi-Voltage IO, High ESD perfermance?

SMIC18 General process, Multi-Voltage IO, High ESD perfermance is a GPIO IP core from VeriSilicon Microelectronics (Shanghai) Co., Ltd. listed on Semi IP Hub. It is listed with support for smic Silicon Proven.

How should engineers evaluate this GPIO?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this GPIO IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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