Vendor: Certus Semiconductor Category: Analog

Multi-Voltage GPIO 5V ODIO and Analog/RF I/Os in TSMC 65nm

1V/3.3V GPIO with I2C ODIO and 3.3V & 5V Analog Cells in TSMC 65nm Key attributes of this IO library include dual independent IO …

Overview

1V/3.3V GPIO with I2C ODIO and 3.3V & 5V Analog Cells in TSMC 65nm

Key attributes of this IO library include dual independent IO supply rails (1.0V-3.3V 3.3V) and power-on-control (POC) to place IOs in HiZ during power-down. The GPIO cell can be configured as input, output or open-drain with a Schmitt trigger input and optional internal 55K ohm pull-up or pull-down resistor. Cells for two independent IO supplies, core power, ground and isolated ground with built-in ESD are included. Aspecialty output cell with matched throughput timings for pulse-width modulation (PWM) applications, along with 5V OTP programming, I2C SVID open-drain and 3.3V 5V analog cells (and associated ESD) complement the GPIO offering. The library is enriched with filler, corner and domain-break cells in digital and analog domains to allow for flexible pad ring construction. ESD design levels are 2KV HBM and 500V CDM.

 Operating Conditions

Parameter Value
VDDIO 1-3.3V / 3.3V (Dual Rail)
Core 1.2V
BEOL 1P7M
WB Pitch 55um inline
Temperate -40C to 125C
ESD +/- 2kV HBM, +/- 500V CDM

Cell Names

Cell Size Type
55x100um Digital
55x76um Analog

 

Key features

  • 1V to 3.3V / 3.3V I/O Operation
  •  Dual indepedent I/O rails
  •  Output enable / disable (HiZ when disabled)
  •  Power-down control (HiZ upon VDD disable)
  •  Schmitt Trigger receiver
  •  55k ohm selectable pull-up or pull-down resistor
  •  ESD: 2kV HBM, 500V CDM
  •  Silicon Proven

Block Diagram

Silicon Options

Foundry Node Process Maturity
TSMC 65nm GP

Specifications

Identity

Part Number
AJ65
Vendor
Certus Semiconductor

Files

Note: some files may require an NDA depending on provider policy.

Provider

HQ: United States

Learn more about Analog IP core

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Field Induced CDM Explained

Integrated circuits are commonly tested for ESD robustness with 2 tests, Human Body Model (HBM) and Charged Device Model (CDM). Most engineers quickly grasp the procedure for HBM, but the CDM test is often poorly understood. This is unfortunate, because a large fraction of the ESD failures experienced in modern board assembly operations are CDM type failures. This article will describe the events which occur during a CDM test conducted using the widely accepted field induced CDM (FCDM) test.

One Platform, Five Libraries: Certus Semiconductor’s I/O IP Portfolio for Every Application on TSMC 22nm ULL/ULP Technologies

Certus Semiconductor’s I/O libraries for TSMC’s 22nm ultra-low leakage (22ULL) and 22nm ultra-low power (22ULP) technologies offer robust, high-performance solutions tailored to a wide range of SoC designs — from ultra-low power IoT nodes to demanding consumer and automotive systems. Whether you need low leakage, high drive strength, or analog compatibility, our production-proven IP covers it all.

Frequently asked questions about Analog I/O Pad Library IP cores

What is Multi-Voltage GPIO 5V ODIO and Analog/RF I/Os in TSMC 65nm?

Multi-Voltage GPIO 5V ODIO and Analog/RF I/Os in TSMC 65nm is a Analog IP core from Certus Semiconductor listed on Semi IP Hub. It is listed with support for tsmc.

How should engineers evaluate this Analog?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this Analog IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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