Low Power Memory IP

Numem MRAM IP is a next-generation memory solution based on proven MRAM technology. It delivers fast access times, ultra-low leakage power, and up to 2.4X smaller cell area than SRAM—making it an ideal upgrade for xPU or ASIC designs. Optimized for power-sensitive AI and edge applications, Numem MRAM IP is a compelling alternative to traditional on-chip SRAM or embedded Flash.

Magnetoresistive Random Access Memory (MRAM) stores data using magnetic states rather than electrical charge—delivering non-volatility, near-zero leakage power, and SRAM-class speed in a single technology. Numem's proprietary solution is built on foundry-based STT-MRAM (Spin-Transfer Torque MRAM) and achieves up to 2.4× smaller cell area than conventional SRAM, enabling denser on-chip memory with instant-on capability and high endurance. Leveraging foundry-standard STT-MRAM cells and differentiated by Numem's proprietary layout and design methodology, Numem delivers scalable, manufacturable solutions as both discrete chips/chiplets and embedded IP. With the addition of the AI Memory Engine (AIME), Numem MRAM is further enhanced—elevating performance, efficiency, and intelligence for next-generation AI systems.