Micro Power Bandgap for TSMC 180nm
The OT0120t130 is a 1.2V CMOS micro power CMOS bandgap and current reference cell with sub-µW power dissipation.
Overview
The OT0120t130 is a 1.2V CMOS micro power CMOS bandgap and current reference cell with sub-µW power dissipation. Can be utilized as non-precision sleep mode bandgap, allowing a higher powered precision bandgap to be powered down.
Key features
- Less than 1µW power dissipation.
- Bandgap untrimmed precision of ±10% over process, temperature, and voltage.
- 100nA PTAT bias current output.
- 1.6V-2V operation
- Power down input.
- Built in switch for glitchless switching between main and sleep mode bandgaps.
- Base cell area 0.02mm2 in 0.18µ CMOS.
- Uses 4 metal layers.
Block Diagram
Applications
- Micro-power systems
- Sleep mode bandgap
What’s Included?
- Verilog model.
- Metal outline.
- Spice netlist for LVS.
- Design review spice files.
- GDS format layout.
- Timing files.
- Integration notes.
- Production test notes.
Silicon Options
| Foundry | Node | Process | Maturity |
|---|---|---|---|
| TSMC | 180nm | BCDG2 | — |
Specifications
Identity
Files
Note: some files may require an NDA depending on provider policy.
Provider
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Frequently asked questions about Voltage Reference IP cores
What is Micro Power Bandgap for TSMC 180nm?
Micro Power Bandgap for TSMC 180nm is a Voltage Reference IP core from Obsidian Technology listed on Semi IP Hub. It is listed with support for tsmc.
How should engineers evaluate this Voltage Reference?
Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this Voltage Reference IP.
Can this semiconductor IP be compared with similar products?
Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.