Vendor: Zixin Microelectronics Technology Co. Ltd. Category: SRAM

Memory Compilers

Memory Compilers

Key features

  • Low Leakage with retention (light and deep sleep)
  • Power Gating with retention and without retention
  • Dual Rail (SRAM Periphery at lower Voltage)
  • Combinations of above low power options
  • Generate larger instances(up to 2Mbits)
  • BIST solution optimized to our memories

Specifications

Identity

Part Number
Memory Compilers
Vendor
Zixin Microelectronics Technology Co. Ltd.
Type
Silicon IP

Files

Product Sheet Download

Note: some files may require an NDA depending on provider policy.

Provider

Learn more about SRAM IP core

A Process-Aware Hybrid Si/IGO Monolithic-3D 6T SRAM with BEOL Pass-Gates for the 2nm Node

The authors propose a monolithic-3D (M3D) 6T SRAM at the 2nm node, integrating BEOL IGO pass-gates (PGs) with an all-silicon nanosheet latch, buried power rails (BPRs), and Ru interconnects. TCAD calibrated to a state-of-the-art double-gate IGO transistor with a tri-layer HfO2/ZrO2/HfO2 (HZH) gate stack is combined with virtual fabrication and 3D parasitic extraction to realize the first process-aware layout of this topology.

Frequently asked questions about SRAM IP cores

What is Memory Compilers?

Memory Compilers is a SRAM IP core from Zixin Microelectronics Technology Co. Ltd. listed on Semi IP Hub.

How should engineers evaluate this SRAM?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this SRAM IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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