Vendor: VeriSilicon Microelectronics (Shanghai) Co., Ltd. Category: ROM

GSMC 0.18um General Process, Low Power circuit design, Diffusion ROM

Based on GSMC 0.13um 1.5V/12V eFlash process, current design of the IP detects light with photodiode.

Overview

Based on GSMC 0.13um 1.5V/12V eFlash process, current design of the IP detects light with photodiode. When the incident light power is more than 70mW/m2, the output is low; otherwise, the output is high.

Key features

  • Process: GSMC 0.13um IBLP 4P5M dual gate e-flash process (1.5v/HV)
  • MOS devices being used: nch, pch
  • Wavelength range of spectral response: 400nm~1100nm
  • Peak sensitivity wavelength: 900nm
  • Current responsibility: 0.2A/W@600nm
  • Dark current: <10pA
  • Settling time: 20us
  • Typical current consumption: 100uA
  • Power down current: 0.1uA
  • Reference voltage adjust step: 50mV
  • Operating Junction Temperature: -40°C~+25°C~+125°C

Specifications

Identity

Part Number
G13LPDG_LDWPD_01
Vendor
VeriSilicon Microelectronics (Shanghai) Co., Ltd.
Type
Silicon IP

Provider

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Frequently asked questions about ROM IP cores

What is GSMC 0.18um General Process, Low Power circuit design, Diffusion ROM?

GSMC 0.18um General Process, Low Power circuit design, Diffusion ROM is a ROM IP core from VeriSilicon Microelectronics (Shanghai) Co., Ltd. listed on Semi IP Hub.

How should engineers evaluate this ROM?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this ROM IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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