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Embedded Memories IP for GLOBALFOUNDRIES

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Compare 23 Embedded Memories IP for GLOBALFOUNDRIES from 8 vendors (1 - 10)
  • Single Port High-Speed Multi Bank SRAM Memory Compiler on GF 22FDX+
    • Ultra-Low Leakage - GLOBALFOUNDRIES low-leakage 6T L110 bit cells with High Vt and low leakage periphery to ensure minimal leakage and high yield.  
    • Multi-Bank Architecture - Memory split into 1 to 4 banks for reduced bit line length and enhanced timing. 
    • Ultra Low Power Standby - Built-in source biasing trims standby current to a minimum for data retention. 
    Block Diagram -- Single Port High-Speed Multi Bank SRAM Memory Compiler on GF 22FDX+
  • Dual Port Register File Compiler (1 Read-only port, 1 Write-only port) - GF 22FDX+
    • Uses 8T-TP185SL bit cells. 
    • Isolated Supplies: Periphery and array power domains can be independently powered down in standby mode. 
    • Deep Sleep Standby Mode: Memory retains data at minimal power via internal biasing. 
    Block Diagram -- Dual Port Register File Compiler (1 Read-only port, 1 Write-only port) - GF 22FDX+
  • Single Port Low Leakage SRAM Memory Compiler on GF 22FDX+
    • Ultra-Low Leakage: High VT (HVT) and low leakage (LLHVT) devices are used with source biasing to minimize standby currents while operating at low voltage 
    • Bit Cell: Utilizes GlobalFoundries®  Ultra-Low Leakage  6T (P110UL) bit cells to ensure high manufacturing yields 
    • Five Power Modes: High Performance, Low Leakage, Standby, Retention, and Power Off modes provide flexibility for power optimization 
    • Speed Grades: Three options to adjust the speed/leakage balance and optimize for high speed or low power operation 
    Block Diagram -- Single Port Low Leakage SRAM Memory Compiler on GF 22FDX+
  • Single Port Low Leakage Register File Compiler - GF 22FDX+
    • Ultra-Low Leakage: High VT (HVT) and low leakage HVT (LLHVT) devices used with source biasing to minimize standby currents while operating at low voltage. 
    • Bit Cell: Utilizes GlobalFoundries® Ultra-Low Leakage 6T (L110) bit cells to ensure high manufacturing yields.   
    • Four Power Modes: Active, Standby, Retention, and Power Off modes provide flexibility for power optimization 
    Block Diagram -- Single Port Low Leakage Register File Compiler - GF 22FDX+
  • Single Port Low Leakage SRAM Memory Compiler on GF 22FDX
    • Ultra-Low Leakage: High VT (HVT) and low leakage (LLHVT) devices are used with source biasing to minimize standby currents while operating at low voltage
    • Bit Cell: Utilizes GlobalFoundries®  Ultra-Low Leakage 6T (P110UL) bit cells to ensure high manufacturing yields
    • Five Power Modes: High Performance, Low Leakage, Standby, Retention, and Power Off modes provide flexibility for power optimization
    • Speed Grades: Three options to adjust the speed/leakage balance and optimize for high speed or low power operation
    Block Diagram -- Single Port Low Leakage SRAM Memory Compiler on GF 22FDX
  • Single Port Low Leakage Register File Compiler - GF 22FDX+
    • Ultra-Low Leakage: High VT (HVT) and low leakage HVT (LLHVT) devices used with source biasing to minimize standby currents while operating at low voltage 
    • Bit Cell: Utilizes GlobalFoundries® Ultra-Low Leakage 6T (P110UL) bit cells to ensure high manufacturing yields 
    • Four Power Modes: Active, Standby, Retention, and Power Off modes provide flexibility for power optimization 
    Block Diagram -- Single Port Low Leakage Register File Compiler - GF 22FDX+
  • Single Port Low Leakage SRAM Memory Compiler on GF 22FDX+
    • Ultra-Low Leakage: High VT (HVT) and low leakage (LLHVT) devices are used with source biasing to minimize standby currents while operating at low voltage 
    • Bit Cell: Utilizes GlobalFoundries®  Ultra-Low Leakage, 6T(L110) bit cells to ensure high manufacturing yields  
    • Five Power Modes: High Performance, Low Leakage, Standby, Retention, and Power Off modes provide flexibility for power optimization 
    Block Diagram -- Single Port Low Leakage SRAM Memory Compiler on GF 22FDX+
  • Single Port Low Leakage Register File Compiler - GF 22FDX
    • Ultra-Low Leakage: High VT (HVT) and low leakage HVT (LLHVT) devices used with source biasing to minimize standby currents while operating at low voltage 
    • Bit Cell: Utilizes GlobalFoundries® Ultra-Low Leakage 6T (P110UL) bit cells to ensure high manufacturing yields 
    • Four Power Modes: Active, Standby, Retention, and Power Off modes provide flexibility for power optimization 
    Block Diagram -- Single Port Low Leakage Register File Compiler - GF 22FDX
  • 3.6Kbit EEPROM IP with configuration 28p8w16bit
    • 130GF_EEPROM_08 IP is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 3.6 Kbits, which is organized as 28 pages of 8 words by 16 bit with single-bit output data and parallel write data.
    • Data programming in EEPROM consists of 2 consecutive phases - erasing and writing.
    Block Diagram -- 3.6Kbit EEPROM IP with configuration 28p8w16bit
  • 2048bits EEPROM with configuration 16p8w16bit
    • GlobalFoundries Embedded EEPROM 0.13 um
    • 2048bit of available memory 16(bit per word) × 8(words per page) × 16(pages) bit
    Block Diagram -- 2048bits EEPROM with configuration 16p8w16bit
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