The RJP01 is 1.920 to 1.980 GHz high efficiency WCDMA Power Amplifier. The Amplifier is designed using 0.18 um SiGe BiCMOS technology. Power amplifier shows PAE of 41% at 28 dBm with off-chip output matching.
It has been designed specially for use in WCDMA application. It operates from 3.2 V to 4.2 V power supply.
SiGe BiCMOS WCDMA Power Amplifier
Overview
Key Features
- Linear Gain
- High PAE
- High Pout
Technical Specifications
Foundry, Node
0.18um SiGe BiCMOS technology
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