12bit 2Msps Ultra low power SAR ADC IP core
12-bit resolution, 2-Msps sample rate Ultra Low Power Mixed-signal SAR ADC IP Core Node available in 22nm, 110nm.
- 12 Bit
Explore data converter IP cores for mixed-signal SoC, ASIC, and FPGA designs. This category includes a broad range of ADC IP, DAC IP, and Audio Codec IP cores used to bridge the analog and digital domains in embedded, industrial, automotive, consumer, and communications applications.
Data converter intellectual property is essential when a chip needs to sense, digitize, generate, or reconstruct real-world signals. These semiconductor IP blocks are commonly used in sensor interfaces, audio systems, control loops, wireless transceivers, instrumentation, edge AI devices, and power-sensitive embedded platforms.
Browse this category to compare analog and mixed-signal IP by architecture, resolution, sampling rate, power consumption, interface support, process compatibility, and application fit. Whether you need precision conversion, high-speed signal acquisition, or integrated audio conversion, this directory helps you identify the right data converter IP core for your next design.
12bit 2Msps Ultra low power SAR ADC IP core
12-bit resolution, 2-Msps sample rate Ultra Low Power Mixed-signal SAR ADC IP Core Node available in 22nm, 110nm.
12bit 1Msps low power SAR ADC IP core
12-bit successive approximation Analog-to-Digital Converter (ADC) is designed for high-performance applications.
12bit IQ High Speed 9.5bitENOB Ultra low power ADC IP Core
High performance, 12-bit resolution, Ultra Low Power Mixed-signal SAR ADC IP Core Node available in 7nm FinFET.
10bit 100Ksps low power SAR ADC IP core
High performance, 10-bit resolution, 100 Ksps sample rate Ultra Low Power Mixed-signal SAR ADC IP Core.
10bit 1Msps low power SAR ADC IP core
High performance, 8-bit resolution, 1-Msps sample rate Ultra Low Power Mixed-signal SAR ADC IP Core Node available in 95nm.
10 bit 3Msps Ultra low power SAR ADC IP core
High performance, 10-bit resolution, 3-Msps sample rate Ultra Low Power Mixed-signal SAR ADC IP Core.
9bit upto 3Msps Ultra low power SAR ADC IP core
High performance, 9-bit resolution, upto 3 Msps sample rate Ultra Low Power Mixed-signal SAR ADC IP Core.
12bit 500Msps High Speed General Purpose SAR ADC IP Core
High performance, 12-bit resolution, 500 Gsps sample rate Mixed-signal General Purpose SAR ADC IP Core, nodes up to 8nm.
12bit 4Gsps SAR General Purpose ADC IP Core
High performance, 12-bit resolution, 4 Gsps sample rate Mixed-signal General Purpose ADC IP, nodes up to 8nm.
16bit 5Msps SAR General Purpose ADC IP Core
The ADC IP offers a resolution of 16 bits and a sample rate of 5Msps at nodes of 40nm Silicon Proven.
12bit 160Msps Ultra low power SAR ADC IP Core
12-bit resolution, 160Gsps sample rate Mixed-signal Ultra low power SAR ADC IP, nodes up to 28nm.
14bit 3.2Gsps High Speed Sigma Delta ADC IP Core
High performance, 14-bit resolution, 3.2Gsps sample rate Mixed-signal Sigma Delta IP, nodes up to 28nm Silicon proven.
14bit 1.3Gsps High Speed Sigma Delta ADC IP Core
High performance, 14-bit resolution, 1.3Gsps sample rate Sigma Delta IP core, nodes up to 28nm Silicon proven.
12bit 2Gsps High Speed Pipeline ADC IP Core
High performance, 12-bit resolution, 2 Gsps sample rate Pipeline ADC IP, nodes up to 28nm.
12bit 320Msps High Speed Pipeline ADC IP Core
12-bit resolution, 320Msps sample rate Mixed-signal IP, nodes up to 28nm Silicon proven.
12bit 200Msps High Speed Pipeline ADC IP Core
High performance, 12-bit resolution, 200Msps sample rate Mixed-signal IP, nodes up to 28nm.
16-bit 5MSPS DAC on TSMC 16 FFC
The ODT-DAC-16B5M-SV-T16 is an ultra-low power, voltage output, 16-bit DAC with a high performance, class AB output buffer.
The ODT-ADS-10B2P5G-T16 is an ultra lowpower, high-performance time-interleaved ADC designed in a 16nm CMOS process.
12bit, 400 MSPS ADC Ultra Low Power
The ODT-ADS-12B400M-G22FDX is an ultra-low power ADC designed in a 22nm CMOS process.
12-bit 400MSPS ADC on TSMC 7nm
The ODT-ADS-12B2400M-7T is an ultra low power ADC designed for use in a 6/7nm CMOS process.