500nm Trimmed Low Power Bandgap

The BG102 is a 1.2V CMOS low power, medium precision CMOS bandgap cell designed for use in a wide variety of mixed signal device applications.

The base design is implemented with lambda-based sizing and portable layout constructs for maximum ease of process porting. The architecture supports operation down to 1.5V.

• Precision of ±0.5% over process, temperature, and voltage.
• 4 Bit temperature coefficient trimming.
• Optional 4 bit voltage trimmer.
• 1.2V output.
• DC PSRR -100dB, Peak PSRR –20dB.
• 15µV RMS output noise
• 3.3 or 5 Volt supply voltage options with option for separate substrate connections.
• Power down input.
• Uses manufacturer supported bipolar structures.
• 500nA positive temperature coefficient current source.
• Bullet-proof start-up circuit.
• Stable to infinite capacitive load.
• Start-up time less than 5µS.
• Base cell area 0.03mm² in 0.35µ CMOS.
• 1P3M CMOS process compatibility.

• Temperature reference.
• LDO.
• Bias generation.

• Metal layout outline.
• Flat GDS layout (for some IP this is delivered to the fab for integration).
• Verilog model.
• SPICE flat netlist. 
• Basic SPICE testbench. Allows for verification of basic function.
• Integration notes, and integration consulting support.
• Test implementation notes.