Amplifier linearization promotes efficiency in multi-carrier WCDMA basestation
Amplifier linearization promotes efficiency in multi-carrier WCDMA basestation
Vendor:
RFIC Solutions, Inc.
Category:
Amplifier
1Watts, 2.1-2.8GHz Power Amplifier
Key features
- Linear power output from 22 to 28dBm.
- Works with multiple power supplied of 3.3V, 5V and 8V.
- Good power added efficiency.
- On chip ESD protection
- Highly stable over all bias, input power and load conditions.
- Very small variation in Gain/Return losses/NF (0.5dB/1dB/0.3dB) over all process corners, temperature variations (-25ºC to 100ºC) and supply voltage variations (±10%)
Specifications
Identity
Part Number
RPA11A
Vendor
RFIC Solutions, Inc.
Type
Silicon IP
Files
Note: some files may require an NDA depending on provider policy.
Provider
HQ:
United States
Learn more about Amplifier IP core
Designing the Beam Steering Core for a C-Band AESA: A Look at VSI's VBF0644 GaAs Beamformer IC
Among the four building blocks of an AESA T/R module — power amplifier, low-noise amplifier, T/R switch, and beamformer IC — the beamformer is the one that most directly determines system-level radar performance.
Powering the Future of RF: Falcomm and GlobalFoundries at IMS 2025
GF’s comprehensive RF portfolio, including our industry-leading RFSOI, SiGe, 22FDX+ and RF GaN platforms, is purpose-built to push the boundaries of what’s possible in connectivity, but we’re not doing it alone. Together with innovative partners like Falcomm, we’re moving the industry forward, providing our customers with cutting-edge solutions to enhance performance, power and integration and create connected technologies with higher signal quality, better efficiency and longer battery life.
Real-Time ESD Monitoring and Control in Semiconductor Manufacturing Environments With Silicon Chip of ESD Event Detection
Integrated circuits are susceptible to electrostatic discharge (ESD) events. Real-time detection and alerting of ESD events in semiconductor manufacturing environments is the key to achieving well ESD control. Additionally, the magnitude and duration of an ESD event are strongly correlated with the specific type of ESD events.
Novel Trade-offs in 5 nm FinFET SRAM Arrays at Extremely Low Temperatures
Linearity Analysis of Source-Degenerated Differential Pairs for Wireline Applications
This paper presents a comprehensive analysis of nonlinearities in differential pairs with source degeneration and their impact on wireline communication applications.
Frequently asked questions about Amplifier IP cores
What is 1Watts, 2.1-2.8GHz Power Amplifier?
1Watts, 2.1-2.8GHz Power Amplifier is a Amplifier IP core from RFIC Solutions, Inc. listed on Semi IP Hub.
How should engineers evaluate this Amplifier?
Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this Amplifier IP.
Can this semiconductor IP be compared with similar products?
Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.