Dual Port SRAM Compiler IP, High density, (2RW), UMC 0.13um HS/FSG process
UMC 0.13um HS/FSG Logic process high density synchronous Dual Port (2RW) SRAM memory compiler.
- UMC
- 130nm
- HS
Embedded memory IP cores are fundamental components in modern SoC and ASIC designs, providing fast and efficient on-chip data storage for processors, accelerators, and peripherals.
These IP cores encompass a broad range of volatile and non-volatile memory technologies, including SRAM for high-speed data storage, ROM for fixed program and boot code storage, register files for processor and accelerator architectures, as well as EEPROM, eFuse/OTP, and MTP (Multiple-Time Programmable) memories for configuration data, security credentials, device calibration, and permanent system information.
This catalog allows you to compare embedded memory IP cores from leading vendors based on density, access time, power consumption, and process node compatibility.
Whether you are designing high-performance processors, AI accelerators, automotive systems, or IoT devices, you can find the right embedded memory IP for your design.
Dual Port SRAM Compiler IP, High density, (2RW), UMC 0.13um HS/FSG process
UMC 0.13um HS/FSG Logic process high density synchronous Dual Port (2RW) SRAM memory compiler.
Single power supply 1.5V 16KB EEPROM
16KB EEPROM, single power supply 1.5V
Dual power supply 1.8V, 2.5~5.5V 9KB EEPROM
9KB EEPROM, dual power supply 1.8V, 2.5~5.5V with low power and industrial temperature range feature
Dual power supply 1.8V, 2.5~5.5V 6KB EEPROM
6KB EEPROM, dual power supply 1.8V, 2.5~5.5V with low power feature and covers industrial temperature range feature
Dual power supply 1.8V, 2.5~5.5V 1KB EEPROM
1KB EEPROM, dual power supply 1.8V, 2.5~5.5V with low power feature and covers industrial temperature range feature
Dual power supply 1.8V, 2.5~5.5V 16KB EEPROM
16KB EEPROM, dual power supply 1.8V, 2.5~5.5V with low power feature and covers industrial temperature range feature
Dual power supply 1.2V and 1.8V 40KB EEPROM
40KB EEPROM, dual power supply 1.2V and 1.8V
Dual power supply 1.2V and 1.5V 40KB EEPROM
40KB EEPROM, dual power supply 1.2V and 1.5V.
Dual power supply 1.2V and 1.5V 32KB EEPROM
32KB EEPROM, dual power supply 1.2V and 1.5V
8Kbit Efuse with parallel input and parallel output
Program Voltage:2.5V, Program Temperature:10~40 degrees, 8Kbit Efuse with parallel input and parallel output
512bit Efuse with parallel input and parallel output
Program Voltage:2.5V, Program Temperature:10~40 degrees, 512bit Efuse with parallel input and parallel output
4Kbit Efuse with parallel input and parallel output
Program Voltage:2.5V, Program Temperature:10~40 degrees, 4Kbit Efuse with parallel input and parallel output
2Kbit Efuse with parallel input and parallel output
Program Voltage:2.5V, Program Temperature:10~40 degrees, 2Kbit Efuse with parallel input and parallel output
256bit Efuse with parallel input and parallel output
Program Voltage:2.5V, Program Temperature:10~40 degrees, 256bit Efuse with parallel input and parallel output
1Kbit Efuse with parallel input and parallel output
Program Voltage:2.5V, Program Temperature:10~40 degrees, 1Kbit Efuse with parallel input and parallel output
ROM Compiler IP, UMC 90nm CIS process
UMC 90nm CMOS Image Sensor process 1P3M Via ROM compiler.
ROM Compiler IP, UMC 55nm LP process
UMC 55nm LP Logic process Via1 ROM memory compiler.
ROM Compiler IP, UMC 55nm eHV process
UMC 55nm eHV PeriHVT Via1 ROM compiler.
ROM Compiler IP, UMC 55nm eFlash process
UMC 55nm eFlash process with peripheral HVT Pcode ROM compiler.
ROM Compiler IP, UMC 40nm LP process
UMC 40 LP/RVT Low-K Logic process Via1 ROM memory compiler.