Low noise amplifier for 28-40 Ghz frequencies for 5G, satcom and other applications

Overview

RFLN05C is a four stage low noise amplifier. It provide high gain over wide bandwidth,low Noise Figure, high isolation, stability. The LNA is designed to operate from 28 – 40 GHz using 0.1um GaAs pHEMT process. The designed LNA, bias current and gain can be set with the gate bias to allow the user to customize the current, gain and NF value to fit the application. The LNA offers, 17 +/- 3 dB.of small signal gain, OP1dB of 19.8 dBm with low noise figure along with the flexibility of setting current and gain makes this LNA an ideal front end amplifier in 5G, Terrestrial communication system and Radar Application. All results are shown in datasheet with considering of parasitic and coupling effects in layout.

Key Features

RF Frequency: 28-40 GHz.
Noise Figure @ 28 GHz : 3.4 dB
Noise Figure @ 32 GHz : 2.7 dB
Noise Figure @ 36 GHz : 2.8 dB
Noise Figure @ 40 GHz : 3 dB
Small Signal Gain of 17 +/- 3 dB.
OP1dB of 19.8 dBm.
OIP3 of 21.4 dBm.
Biasing: VDD=4V, VGG=-0.75V, ID= 88mA
Die Size: 1.15 mm x 1.95 mm
This IP is similar in performance with MACOM's XL1000-BD

Benefits

Wideband gain
50? Matched RF Input and Output
Wideband stability
Low cost
Low current
Porting: IP can be ported to 65nm Si / CMOS node

Block Diagram

Applications

5G mobile phones, systems,
Terrestrial communication system.
Point to point communication system.
Radar Application.

Deliverables

Schematic and Netlist
Abstract Model (.lib file)
Layout View(Optional)
Behavioral model (Circuit & EM simulation)
Extracted View(Optional)
GDSII
DRC, LVS, Antenna report
Test bench with saved configuration(Optional)
Documentation

Technical Specifications

Foundry, Node

Win Semiconductor, 100 nm GaAs pHEMT process

Maturity

IC is fabricated and tested.

Availability

Now

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