TSMC Sees Fast Ramp for 20-nm
Peter Clarke, Electronics360
17 October 2013
TSMC will start making 20-nm CMOS in volume production in the first quarter of 2014 and the process will ramp faster than 28-nm node did in 2012, according to Morris Chang, chairman and CEO of TSMC. Meanwhile, development of the 16-nm FinFET process is going well, with volume production due to start one year after 20-nm bulk CMOS, he said.
Speaking in a conference with analysts held to discuss TSMC's third quarter financial results, Chang spoke in glowing terms about TSMC's capabilities at the leading-edge of silicon manufacturing, emphasizing thaat they would ensure TSMC's success in the quarters and years to come.
To read the full article, click here
Related Semiconductor IP
- 12-bit, 400 MSPS SAR ADC - TSMC 12nm FFC
- 3.3V Capable GPIO on TSMC 28nm RF HPC+
- 1.2V Thin Oxide GPIO on TSMC 28nm RF HPC+
- LDO Voltage Regulator, 250 mA, TSMC N3P
- LDO Voltage Regulator, Adjustable 0.45 V to 0.9 V Output, 30 mA, TSMC N3P
Related News
- AMD Announces Production Ramp of Next-Generation AMD EPYC Processor “Venice” on TSMC 2nm Process Technology
- TSMC Ships One-Millionth 12-Inch 90NM Wafer Fast ramping process reaches milestone in 4½ years
- Company uses MIPS to "Ramp" toward DSL platforms
- Actel Introduces Web-Based Program for Fast Prototype Delivery
Latest News
- VeriSilicon Introduces CPP2000 Camera Post-Processing IP for Embodied Robotics and Mobile Vision Applications
- Infineon opens the world's largest fab for power semiconductors and analog/mixed-signal technologies in Dresden
- Tenstorrent Sets New Performance Records, Launches TT- Ascalon S, and Expands Across Japan
- Chips&Media Signs APV codec IP Licensing Deal with North American Big Tech, Establishing the ‘Second Front’ Against Apple’s ProRes
- Chipsolve Technologies Appoints Balaji Kanigicherla as Chairman of the Board