TSMC Sees Fast Ramp for 20-nm

Peter Clarke, Electronics360
17 October 2013

TSMC will start making 20-nm CMOS in volume production in the first quarter of 2014 and the process will ramp faster than 28-nm node did in 2012, according to Morris Chang, chairman and CEO of TSMC. Meanwhile, development of the 16-nm FinFET process is going well, with volume production due to start one year after 20-nm bulk CMOS, he said.

Speaking in a conference with analysts held to discuss TSMC's third quarter financial results, Chang spoke in glowing terms about TSMC's capabilities at the leading-edge of silicon manufacturing, emphasizing thaat they would ensure TSMC's success in the quarters and years to come.

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