Faraday Announces LPDDR4/4X in Samsung 14LPC Process
HSINCHU, Taiwan -- June 29, 2021 -- Faraday Technology Corporation (TWSE: 3035), a leading ASIC design service and IP provider, today announced its LPDDR4 and LPDDR4X combo PHY IP up to 4.2Gbps is now available in Samsung’s 14nm LPC process. The silicon proven solution provides smaller area, lower power, and high bandwidth for applications such as multi-media, AR/VR, AI edge computing, AIoT, IIoT, Robot, MFP, SSD, 5G and networking.
Faraday’s newly launched LPDDR4/4X solution, verified in conjunction with Faraday LPDDR4/4X Controller, is compliant with JEDEC standard and supports DFI 4.0. The highly compact design provides additional flexibility with two hardened configurations supporting both in-line rectangular and corner-edge placement. The built-in PLL enables improved input clock jitter performance. The solution also supports both KGD or packaged, single or multi DRAM chips.
“We are pleased to launch the LPDDR4/4X solution in the highly cost-effective Samsung 14LPC process,” said Flash Lin, COO of Faraday Technology. “Faraday has accumulated abundance of DDR3/4 and LPDDR3/4 success cases in nodes ranging from 55nm to 28nm across numerous applications. We can now offer Samsung Foundry Customers the benefit of our broad DDR experience. We expect to deliver more high-value, cost effective IP for customers based on Samsung FinFET technology,” he added.
About Faraday Technology Corporation
Faraday Technology Corporation (TWSE: 3035) is a leading ASIC design service and IP provider, certified to ISO 9001 and ISO 26262. The broad silicon IP portfolio includes I/O, Cell Library, Memory Compiler, ARM-compliant CPUs, DDR2/3/4, LPDDR1/2/3/4/4X, MIPI, V-by-One, USB 2.0/3.1 Gen 1, 10/100/1000 Ethernet, Serial ATA, PCI Express, and programmable SerDes, etc. Headquartered in Taiwan, Faraday has service and support offices around the world, including the U.S., Japan, Europe, and China. For more information, visit www.faraday-tech.com or follow Faraday on LinkedIn.
Related Semiconductor IP
- LPDDR4 multiPHY V2 in Samsung (8nm) for Automotive
- LPDDR4 multiPHY V2 in Samsung (14nm, 11nm, 10nm, 8nm)
- LPDDR5/4/4X PHY in Samsung (14nm) for Automotive
- LPDDR4X multiPHY in Samsung (14nm, 11nm)
- DDR4/3 PHY in Samsung (14nm, 11nm, 10nm, 8nm)
Related News
- Faraday Announces Proven MIPI D-PHY for Samsung Foundry 14LPC Process
- Faraday Delivers SAFE™ IP Portfolio for Samsung Foundry 14LPP Process
- Faraday Monthly Consolidated Sales Report - May 2018
- Faraday Exhibits AI FPGA-to-ASIC Solution and IoT SoC Platform at DAC 2018
Latest News
- BrainChip Launches AKD1500 Raspberry Pi 5 Kit: Giving Developers a Direct Path from Prototype to Production
- Cadence Joins the Genesis Mission Consortium to Advance AI-Driven Scientific Discovery and Microelectronics Innovation
- Onsemi picks up Codasip’s low-end RISC-V business for $14.5 million
- Semidynamics and Nokia Explore Collaboration to Strengthen Europe’s Sovereign AI Capabilities
- VeriSilicon Introduces GLTiny™ 3D GPU Programming Model for Ultra-Low-Power, Memory-Efficient Wearable Devices